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1 results

  • Composition Dependence of Dielectric Anomaly in Strontium Bismuth Tantalate Thin Films

  • Koichi Takemura, Takehiro Noguchi, Takashi Hase, Hidekazu Kimura, Yoichi Miyasaka
  • Journal:
    MRS Online Proceedings Library Archive / Volume 541 / 1998
    Published online by Cambridge University Press:
    10 February 2011, 235
    Print publication:
    1998

  • Effects of off-stoichiometry and Nb substitution on the dielectric anomaly and ferroelectric properties have been investigated for SrBi2Ta2O9(SBT) thin films. Local atomic environment for the stoichiometric and off-stoichiometric SBT films has been also measured. The features of the dielectric anomaly, the Curie temperature (Tc), and the temperature dependence of the spontaneous polarization (Ps) are independent of the film thickness, and are governed by the nature of the crystal. For the stoichiometric Sr content SBT films, the grain size increases and the temperature dependence of the remanent polarization (Pr) decreases with increasing thickness. For the films with Sr/Bi/Ta = 0.8/2/2 and 0.8/2.2/2, Sr deficient local structure was observed, and such lattice structure probably leads to higher Tc than the stoichiometric crystal. Nb substitution for Ta also raises Tc, and makes the dielectric anomaly sharper. The phase transition associated with the dielectric anomaly for these films is thought to be first-order.