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This study aimed to validate the Japanese versions of the Trust in Oncologist Scale (TiOS-J) and the TiOS-Short Form (TiOS-SF-J).
A cross-sectional web-based survey was conducted among cancer patients in Japan. The forward-backward translation method was used to develop the TiOS-J. The web-based survey was mailed to 633 people, of whom 309 responded. After 2 weeks, 103 among the 156 first-time respondents completed the second survey to verify the reliability of the retest method. The validity was evaluated by exploratory factor analysis (EFA), confirmatory factor analysis (CFA), Spearman’s correlation coefficients between the Patient Satisfaction Questionnaire-Japanese, willingness to recommend the oncologist, trust in health care, and number of oncological consultations. To evaluate reliability, Cronbach’s α and test–retest correlation were calculated.
The theoretically driven four-factor model and the EFA-driven one-factor model of the full-form TiOS-J (18 items) did not result in an acceptable fit; however, CFA supported the one-dimensionality of the 5 items from the TiOS-SF-J (χ2 (5) = 12.36, p = 0.03, goodness-of-fit index = 0.984, adjusted goodness-of-fit index = 0.952, comparative fit index = 0.991, and root mean square error of approximation = 0.069). With regard to the reliability of TiOS-J and TiOS-SF-J, the Cronbach’s alpha values were 0.94 and 0.89, respectively; the test–retest values were 0.82 and 0.78.
Significance of Results
This study indicated that the TiOS-J and TiOS-SF-J are valid and reliable instruments for measuring patients’ trust in their oncologists and can be used to assess trust in oncologists for both clinical and research purposes.
The thermal conductivity of amorphous indium zinc oxide (IZO) thin films was measured by the 3ω method. Three IZO films were prepared by dc magnetron sputtering method on Si substrate under different O2 flow ratios (O2 / [Ar+O2]) of 0%, 1%, and 5%. The thermal conductivity of IZO films decreases with an increase in O2 flow ratio, the values of the thermal conductivity were 3.4, 3.1 and 1.2 W m-1 K-1 for O2 flow ratios of 0%, 1%, and 5%, respectively. To investigate relationships among the thermal conductivity, the structure and other physical properties, we were carried out nanoindentation, Rutherford back scattering (RBS), electron spin resonance (ESR). The result of ESR measurements indicated that the amount of conduction electron in the IZO film decreases with increasing O2 flow ratio. Increase of O2 flow ratio reduces the amount of oxygen vacancies for providing free electrons. Therefore, decreasing thermal conductivity with an increase in O2 flow ratio is attributed to decreasing conduction electrons as thermal carrier. On the other hand, the chemical composition of IZO films is independent of O2 flow ratio. Furthermore, density, Young’s modulus and hardness also show little changes with increasing O2 flow ratio. Density, Young’s modulus and hardness are strongly associated with the internal structure. It is probable that influence of oxygen vacancies on the internal structure of IZO film is negligibly small.
We observed a preformed plasma of an aluminum slab target produced by a high-intensity Ti:sapphire laser. The expansion length of the preformed plasma at the electron density of 3 × 1018 cm−3, which was the detection limit, was around 100 μm measured with a laser interferometer. In order to characterize quantitatively and to control the preformed plasmas, we perform a two-dimensional hydrodynamic simulation. The expansion length of the preformed plasma was almost the same as the experimental result, if we assumed that the amplified spontaneous emission lasted 3.5 ns before the main pulse arrived.
High-energy protons are generated by focusing an ultrashort pulsed
high intensity laser at the Advanced Photon Research Center, JAERI-Kansai
onto thin (thickness <10 μm) Tantalum targets. The laser
intensities are about 4 × 1018 W/cm2. The
prepulse level of the laser pulse is measured with combination of a PIN
photo diode and a cross correlator and is less than 10−6.
A quarter-wave plate is installed into the laser beam line to create
circularly polarized pulses. Collimated high energy protons are observed
with CH coated Tantalum targets irradiated with the circularly polarized
laser pulses. The beam divergence of the generated proton beam is measured
with a CR-39 track detector and is about 6 mrad.
We report a process for Silicon (Si) nano-crystal dots fabrication using a cold-wall Ultrahigh-Vacuum Chemical Vapor Deposition (UHV-CVD) system. Si2H6 gas was used as the pre-curser and irradiated upon SiO2 film on Si wafer to form Si nano-crystal dots.
In our system, nucleation, growth, and coalescence phases of nano-crystal dots on SiO2 were found to be related with the optical pyro-meter's read-out curve.
At first, the optimum gas irradiation time which gives the highest dot density without coalescence was decided for every gas irradiation condition by using an optical pyro-meter. Then, the dependence of optimum gas irradiation time, dot diameter and dot density on gas flow rate and wafer temperature were investigated. A decrease of wafer temperature or an increase of gas flow rate during the nucleation and growth phase results in a decrease of dot diameter and an increase of dot density. The optimum gas irradiation time was prolonged by decreasing wafer temperature or gas flow rate.
Finally, a reproducible process of forming non-coalesced, small size, and high-density Si nano-crystal dots of about 5.5nm in diameter with density of 1x1012 dots/cm2 were obtained. Typical process time to get such dot formation characteristics was about 10 minutes, which were long enough for ensuring reproducibility.
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