A novel process to fabricate a thick silica gel film on an aluminum substrate, named the “gap filling method”, has been developed. The process is based on a sol-gel method accompanied by phase separation in a submillimeter thick space defined by two facing substrates. Dielectric thick film integrated on a metal ground plate is successfully formed by using a SiO2 coated aluminum substrate and a cap plate covered with an amorphous carbon thin film, which control the hydrophilicity and the hydrophobicity of the plates, respectively. A thin continuous layer of less than 0.5 μm thick is formed at the interface between the porous film and the cap plate, which gives the film a smooth surface preferable for patterning metal circuits of an antenna. The observed dielectric constants (εr) at 60 GHz measured by the Fabry-Perot resonator method are in the range between 1.4 and 1.6. Methyl groups homogeneously distributed in the siloxane network give a hydrophobic siloxane gel film, thus the obtained films have enough environmental stability. These results show that the gap filling method is applicable to the preparation of the porous thick film that is needed for antenna applications.