Book chapters will be unavailable on Saturday 24th August between 8am-12pm BST. This is for essential maintenance which will provide improved performance going forwards. Please accept our apologies for any inconvenience caused.
To send content items to your account,
please confirm that you agree to abide by our usage policies.
If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account.
Find out more about sending content to .
To send content items to your Kindle, first ensure firstname.lastname@example.org
is added to your Approved Personal Document E-mail List under your Personal Document Settings
on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part
of your Kindle email address below.
Find out more about sending to your Kindle.
Note you can select to send to either the @free.kindle.com or @kindle.com variations.
‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi.
‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.
We have studied the improvement of the quality of undoped a-Si:H deposited by remote-plasma chemical vapour deposition. The effects of reactant gas concentration, rf power, substrate bias voltage on the electrical and optical properties have been investigated. Some hydrogen dilution of si lane improves the photoeletric property and a high rf power gives rise to the defect creation due to the ion bombardment on the growing surface. The positive substrate bias improves the quality of undoped a-Si:H.
We have investigated temperature dependence on the hysteresis phenomenon of SLS poly-Si TFT on a glass substrate, extremely at low temperature (213K). The p-type sequential lataral solidification (SLS) polycrystalline Silicon (poly-Si) TFT was fabricated on glass substrate. As the temperature was reduced, it was observed that hysteresis phenomenon was increased, whereas the hysteresis was suppressed at high temperature. This could be explained by a difference of initially electron and hole trapped charges into gate insulator is much larger in low temperature than in high temperature. And we have verified that drain current was changed with a different previous gate starting voltage even at same bias condition by experimental results due to the hysteresis phenomenon of SLS poly-Si TFT. Hysteresis of SLS poly-Si TFT should be improved for a pixel element of high quality AMOLED display.
Email your librarian or administrator to recommend adding this to your organisation's collection.