Atomic processes at the interface in regrowth following laser induced
melting were investigated by observing behavior of impurity segregation. The
interfacial segregation coefficient k* was obtained from depth profiles of
solute atoms redistributed by laser irradiation of uniformly doped Si, Ge,
and GayAl1−yAs crystals. It was found that
k*=k0 for B in Si, Ga in Ge ih the growth rate range of 1 m/s.
It is concluded that rapid growth freezes a state of liquid monolayer
adjacent to the interface which has the character of ideal solution from
dilute to eutectic composition for dopant-silicon systems and in the entire
range of composition for the mixed crystal.