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1 results

  • Reduced Time for Uniform Etching of Cu Power Planes during FIB Editing

  • V.V. Makarov, W.B. Thompson, T.R. Lundquist
  • Journal:
    MRS Online Proceedings Library Archive / Volume 766 / 2003
    Published online by Cambridge University Press:
    01 February 2011, E3.10
    Print publication:
    2003

  • Dry etching of Cu challenges the Focused Ion Beam (FIB) removal of metallizations. Cu metallizations are comprised of numerous, randomly orientated crystallites. Each orientation shows a different etch rate under ion bombardment, leading to unacceptable damage to underlying dielectric. An improved methodology for uniform Cu etching over dielectric consists of three steps: 1) Exposure, 2) Initial off-normal bombardment and 3) Chemistry assisted ion bombardment. Comparison is made with and without preliminary off-normal bombardment. It is shown that Cu etching preceded by off-normal bombardment was completed ∼50% sooner with decreased dielectric over-etch.