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New surgical techniques and devices have been described that decrease post-tonsillectomy morbidities. This study aimed to compare the two most popular tonsillectomy techniques.
Forty children underwent tonsillectomies using both the thermal welding and cold dissection techniques. In each patient, one side was removed with thermal welding and the other was removed with cold dissection.
There was a significant decrease in intra-operative blood loss, and the mean operation time was significantly lower on the thermal welding side compared with the cold dissection side. On the cold dissection side, tissue healing (i.e. the rate of complete tissue healing) was better and less pain was reported compared with the thermal welding side. However, there were no significant differences between the two techniques in terms of throat pain scores on the 1st, 3rd or 14th day post-operatively, or tissue healing scores on any of the post-operative days assessed.
Cold dissection resulted in better tissue healing and lower pain scores than thermal welding, but thermal welding was associated with less intra-operative blood loss and lower mean operation time than cold dissection.
This paper reports a study of the non-radiative processes competing with the excitation of the erbium ion in layers implanted with high concentrations of erbium and oxygen. These processes reduce the luminescence efficiency of the Si:Er system and dramatically increase the threshold current density calculated to be necessary for an ultimate goal, the Si/Ge:Er LASER. Using cross sectional TEM, photoluminescence as a function of temperature and DLTS, it is demonstrated that a two stage anneal procedure which avoids the formation of extended defects and removes specific deep states is necessary to obtain efficient Er3+ excitation at high erbium concentrations. Comparisons are made with damage resulting from germanium implantation into silicon. The role of multiple stage anneals is discussed in relation to the removal of Shockley-Hall-Read recombination centres
Photoluminescence of silicon implanted with erbium and oxygen was measured in the time domain focussing on the temperature and excitation density dependence of the intra-4f-shell emission from Er3+. The decay of this luminescence is similar for the different optically active crystal field split Er-centres. At low temperatures the luminescence transients consist of a fast initial non-exponential component followed by slower exponential behaviour. An increase in excitation density results in a higher proportion of the luminescence decaying with the faster decay time. Our results indicate a relation of the fast component to nonradiative processes. Auger recombination is proposed as a possible mechanism.
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