Four microseconds long Ar3+ beam with injection energy of 15 keV/u has been injected into the Digital Accelerator of the High-Energy Accelerator Research Organization. Beam production, transportation, and injection are described as well as machine properties. Results of a free running experiment under static magnetic field and longitudinal confinement and acceleration under a fast ramping magnetic field are presented in detail with a brief discussion on the beam lifetime.

We report on our growth of superconducting SmFeAs(O,F) films by F diffusion. In our process, F-free SmFeAsO films were grown by molecular beam epitaxy (MBE) first, and subsequently F was introduced into the films via F diffusion from an overlayer of SmF3. We performed a detailed comparison of the growth conditions and also the properties of resultant films for fluoride and oxide substrates. The best films on CaF2 exhibited a high transition temperature, T c on (T c end) = 57.8 K (56.4 K) at highest, which may exceed the highest T c ever reported for bulk samples. Furthermore the films on CaF2 also showed high critical current density over 1 MA/cm2 in self-field at 5 K.

Single-crystalline films of superconducting Sr1-x K x Fe2As and Ba1-x K x Fe2As2 were grown by molecular beam epitaxy (MBE). The most crucial problem in MBE growth of these compounds is the high volatility of elemental K. The key to incorporating K into films is low-temperature growth (≤ 350 ºC) in reduced As flux. We performed a systematic study of the doping dependence of T c in Ba1-x K x Fe2As2 for x = 0.0 to 1.0. The highest T c on (T c end) so far attained for Ba1-x K x Fe2As2 is 38.3 K (35.5 K) at x ~ 0.3.

We present the initial results of a spectral line survey of L1157 B1 with the Nobeyama 45 m telescope. So far, we have covered the frequencey range of 13.7 GHz (82.0–94.5 GHz and 96.3–97.5 GHz), and have detected 22 species including CH3CHO, HCOOH, HCOOCH3, HNCO, NH2CHO, CH3CN, and CCS. We have also detected the line of CH2DOH. These results demonstrate rich chemistry in this shocked region, which would mainly originate from evaporation of ice mantles by means of shocks.

Strain in silicon on insulator (SOI) and strained-silicon(s-Si)/silicon–germanium (SiGe)/Si-substrate crystals is analysed by means of synchrotron X-ray microbeam diffraction. It is found that strain features of the s-Si/SiGe/Si crystals are much different from those of SOI crystals from the lattice tilt and lattice parameter distribution points of view. The two-dimensional lattice tilt maps obtained by scanning the synchrotron X-ray microbeam of about 1 μm in size on the sample surface are useful to study local strain distribution in those materials.

Invasive pneumococcal disease (IPD) is of concern in Japan, where the heptavalent pneumococcal conjugate vaccine (PCV7) is unavailable. We determined serotypes, genotypes indicating β-lactam resistance, and antibiotic susceptibilities of 496 isolates from normally sterile sites in patients (193 children, 303 adults) from 186 institutions between August 2006 and July 2007. Disease presentations included sepsis (46·2%), pneumonia (31·5%), and meningitis (17·5%). Mortality was 1·4% in children and 22·1% in adults, many of whom had underlying diseases. In children, serotype 6B (22·5%) was followed by 19F (14·1%), and 14 (13·1%); potential coverages of PCV7 and PCV13 were 75·4% and 93·7%, respectively. In adults, serotype 12F (14·3%) was followed by 3 (11·3%), and 6B (10·3%); 23-valent polysaccharide vaccine (PPV23) coverage was 85·4%. Most serotype 12F strains were gPISP, with pbp2b gene alteration; carbapenem had an excellent MIC90. PCV7 is recommended for children and PPV23 for adults to increase prevention against IPD.

An experimental method is proposed for detecting the effects of positive natural selection on DNA polymorphisms. Since beneficial mutations are expected to increase in frequency faster than neutral mutations, variants which have reached high frequencies in a relatively short period could be linked to some beneficial mutation. D. melanogaster has a cosmopolitan polymorphic inversion -In(2L)t - whose age in some local populations has been estimated. Setting the age of In(2L)t as the upper limit for the age of variants, we searched for variants whose frequencies were possibly influenced by positive natural selection. We detected a single candidate whose frequency and distribution met the requirements imposed by our method.

The resistance random access memory is attracting much attention as a high-density and high-speed non-volatile memory, having large resistance switching ration and good affinity with the conventional CMOS technologies. We demonstrate the resistance switching in the NiO thin film without using Pt electrode.

A systematically peculiar molecular composition has been found in a nearby starburst galaxy M 82. Molecules related to grain surface formation and to production reactions favorable at high-temperature are deficient in M 82 among nearby galaxies with rich gas. These molecules are SO, SiO, NH3, HNCO, CH3OH, and CH3CN. Possible reasons for this peculiarity are discussed.

We use a novel ultra-high-speed video camera to study the initial stage of the impact of a solid sphere onto a liquid surface, finding a high-speed horizontal jet which emerges immediately following the intial contact. For ${\hbox{\it Re}} > 2 \times 10^4$ the jet emerges when the horizontal contact between the sphere and the liquid is only 12% of its diameter. For the largest Reynolds numbers this jet can travel at more than 30 times the impact velocity of the sphere. This jetting occurs sooner and at much higher normalized velocities than has been observed previously. The breakup of the jet into a spray of droplets sometimes occurs through formation of pockets in the liquid sheet. Early in the impact, the energy transferred to the jet and the subsequent spray sheet is estimated to be much larger than the energy associated with the added mass inside the liquid pool. The jetting will therefore greatly increase the initial impact force on the sphere.

The bulk crystal of silicon germanium was grown by vertical Bridgman method with germanium composition, x, varying from 0.6 to 1.0. The temperature dependent variation of the mobility is indicative of alloy scattering dominantly for the bulk wafer. Phosphorus was diffused in as-grown p-type bulk wafer at 850 °C to form pn-junction, and the diffusion coefficient of phosphorus was evaluated as a function of x. The diffusion behavior of phosphorus in silicon germanium is closely correlated with the germanium self-diffusion with changing x. For specimens with lower content x, P concentration profiles indicated “kink and tail” shape, while it was not observed for higher x. For current-voltage characteristics measurement, an ideality factor was obtained.

In order to characterize the heat generation behavior of a lithium-ion cell during charge and discharge, calorimetry has been carried out. The influence of past treatments applied to the cell is examined based on heat generation. The test cell shows a voltage hysteresis during charge and discharge, and the heat generation behavior is related to this hysteresis. A hard carbon is used in the cell as the negative electrode material, and the hysteresis mechanism and heat generation are discussed based on the reactions in the hard carbon electrode.

We have demonstrated the influence of surface microroughness on the electrical characteristics of MOS devices and investigated the influence of wafer's manufacturing methods, such as Czochralski(Cz), floating-zone(FZ), and epitaxial(Epi) silicon wafers, on the susceptibility to the surface microroughness when some chemical treatment was performed. As a result, it was found that Cz and FZ wafers are very susceptible to the surface microroughness and the amount of the vacancy of Epi wafer is much smaller than that of another wafers. It was also demonstrated that the electrical characteristics of very thin gate oxide films are strongly influenced by the silicon substrate quality. Epi wafer is a strong candidate for fablication of highly-reliable devices on 300mm wafers.

A high time- and spatial-resolution radio interferometer for solar observations has been constructed at Nobeyama (Figure I.; Nakajima et al. 1994). The Nobeyama Radioheliograph consists of 84 antennas, 0.8m in diameter, arranged on a T-shape lines of 500m in the EW and 220m in the NS directions. The time resolution is 50 ms and the spatial resolution is 10”. The field of view is 40’ at the observing frequency 17GHz, which enables us to watch the whole sun. The radioheliograph has observed hundreds of flares during the few months since the beginning of regular observations in July ‘92, and such powerful performance has never before been demonstrated in the history of solar radio observations.

The third order theory of coupling is discussed regarding the radial pulsation of stellar models.

Electrical characteristics of the very thin oxides including oxide films formed in various chemicals were evaluated by means of the ultraclean oxidation system. The very thin oxides including the oxide films formed in H2SO4/H2O2, O3/H2O, and Hot-H2O22 have been found superior terms of reliability to those including the oxide films formed in NH4OH/H2O2/H2O and HCI/H2O2/H2O. The oxide films formed in H2SO4/H2O2, O3/H2O, and Hot–H2O2 have been found to function as the controlled passivation films which suppress increase of surface microroughness when heating of the wafer to thermal oxidation temperature in the inert gas ambience.

The degradation mechanism of the Schottky contact of Al/Ti/n-GaAs and Al/Pt/Ti/n-GaAs under the heat treatment of 300°C has been investigated. Barrier height of the Al/Ti/n-GaAs Schottky contact degrades drastically after the heat treatment, in which Ti-Al alloy and Ga out-diffusion have been observed. On the other hand, the barrier height of Al/Pt/Ti/n-GaAs contacts is stable under the heat treatment and, Al-Ti alloying as well as Ga out-diffusion in the metals could not be noticed. From these results, it is presumably concluded that the degradation of the Schottky contacts under the heat treatment is closely correlated with the Ga atom out-diffusion from GaAs surface into the metal films after Al-Ti alloy reach to the GaAs surface. The barrier height reduction after the heat treatment can be explained by the formation of the donor type level at the interface due to the Ga vacancy pile-up arose from the Ga out-diffusion. Pt layer was proved to be an effective barrier suppressing the intermetallic alloying and preventing out-diffusion of Ga.

Epitaxially grown iron oxide films have been studied microscopically by conversion electron M~ssbauer spectroscopy. Specially designed proportional counters cover a temperature range between 1.75K and 1100K. A 5Å-thick layer containing 57Fe was grown at an arbitrary depth of a 56 Fe3O4 film, even- at the topmost or at the interface with a substrate crystal, to find local properties nondestructively. Temperature dependence of the hyperfine parameters of Bi 3 Fe5O12 films were analyzed to find structural and magnetic effects of Bi3+ in comparison with usual garnets. The Morin transition of α-Fe2O3 was found to strongly depend upon the orientation of films and post-annealing.

There are many investigations about thin film. However, these are limited to the surface layer thin film on substrates. It Is very important to know the characteristics of the extremely thin film itself such as surface layer thin film.

In the present paper, the first part deals with the thickness measurements of the surface layer film and substrate by means of x-ray method, and then the measurement method of their stress - strain curves and the procedure of the measurement are described. The results obtained are discussed on the basis of their stress — strain curves.

We have made aperture synthesis maps of Orion-KL in NH3(1,1),(2,2) and CS(J=l-0) emissions using the Nobeyama Millimeter Array. Both NH3 and CS maps show new detailed structures that have not been recognized before. Two NH3 filaments in the size of ~0.45 pc x0.04 pc are found extending to the northwest direction of Orion-KL. These filaments are associated with the HH objects and the finger-like H2 emissions; they are probably formed through the interaction with high velocity, highly channeled winds from the KL region. The CS maps show, on the other hand, shell structures around IRc2 as well as the well-known rotating disk. These shells coincide with the two lobes of the shock-excited H2 emission, being interpreted as the shock-compressed shells of ambient molecular gas interacting with the outflow from IRc2.