Over the past few years there has been substantial progress in the TXRF analysis of heavy element surface contamination on silicon wafers. Further advances and improvements are desired in the analytical performance and hardware. Extension of the analytical range to include the light elements is particularly desirable.
In the case of light element analysis, sodium and aluminum impurities have been monitored in the IC production process. The increase of the sodium impurity in a silicon wafer gives rise to a decrease in the insulation in IC devices and the growth of the SiO2 film is disturbed by the prsence of aluminum impurity on the silicon wafer surface.