Praseodymium oxide Pr2O3 (and Pr6O11) layers were deposited by innovative pulsed injection MOCVD technique on Si(100) in the temperature range 400-750°C. Praseodymium 2,2,6,6-tetramethyl-3,5-heptanedionate dissolved in monoglyme (1,2-dimethoxyethane) or toluene was used as precursor material. The influence of deposition conditions on film composition, growth rate, crystallization and surface roughness has been investigated. The main parameters influencing film composition and properties were substrate temperature and partial oxygen pressure during deposition. The presence of molecular oxygen in the reactor leads to the growth of Pr6O11 as the most stable phase or its mixture with PrO2, while deposition in inert atmosphere (Ar, 2 torr) allows to obtain Pr2O3 films which were amorphous or crystalline depending on the deposition temperature. Crystallized (polycrystalline) Pr2O3 films can be obtained at the growth temperatures 650°C and higher, while crystalline Pr6O11 films grow starting 400°C. Ex-situ annealing (750°C, vacuum, 2 hours) of the amorphous Pr2O3 films leads to film crystallization. Step coverage study has been performed for amorphous and crystallized Pr2O3 films. Electrical properties of thin (∼10 nm) Pr2O3 films were investigated and encouraging EOT (equivalent oxide thickness), leakage current data have been obtained.