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A variety of hereditary spinocerebellar ataxia (SCA) develops a broad spectrum of both ataxia and non-ataxia symptoms. Cognitive and affective changes are one such non-ataxia symptoms, but have been described only in hereditary SCAs with exonic CAG gene expansion.
We newly found intronic hexanucleotide GGCCTG gene expansion in NOP56 gene as the causative mutation (=SCA36) in nine unrelated Japanese familial SCA originating from Asida river area in the western part of Japan, thus nicknamed Asidan for this mutation. These patients show unique clinical balance of cerebellar ataxia and motor neuron disease (MND), locating on the crossroad of these two diseases. We examined cognitive and affective analyses on 12 Asidan patients who agreed to join the examination.
The 12 Asidan patients demonstrated a significant decrease in their frontal executive functions measured by frontal assessment battery (FAB) and Montreal cognitive assessment (MoCA) compared with age- and gender-matched controls, whilst mini-mental state examination (MMSE) and Hasegawa dementia score-revised (HDS-R) were within normal range. the decline of frontal executive function was related to their disease duration and scale for the assessment and rating of ataxias (SARA). They also demonstrated mild depression and apathy. Single-photon emission tomography (SPECT) analysis showed that these Asidan patients showed decline of regional cerebral blood flow (rCBF) in a particular areas of cerebral cortices such as Brodmann areas 24 and 44-46.
These data suggest the patients with Asidan mutation show unique cognitive and affective characteristics different from other hereditary SCAs with exonal CAG expansion or MND.
The ALMA twenty-six arcmin2 survey of GOODS-S at one millimeter (ASAGAO) is a deep (1σ ∼ 61μJy/beam) and wide area (26 arcmin2) survey on a contiguous field at 1.2 mm. By combining with archival data, we obtained a deeper map in the same region (1σ ∼ 30μJy/beam−1, synthesized beam size 0.59″ × 0.53″), providing the largest sample of sources (25 sources at 5σ, 45 sources at 4.5σ) among ALMA blank-field surveys. The median redshift of the 4.5σ sources is 2.4. The number counts shows that 52% of the extragalactic background light at 1.2 mm is resolved into discrete sources. We create IR luminosity functions (LFs) at z = 1–3, and constrain the faintest luminosity of the LF at 2 < z < 3. The LFs are consistent with previous results based on other ALMA and SCUBA-2 observations, which suggests a positive luminosity evolution and negative density evolution.
This study evaluated the relationship between radiation and Eustachian tube dysfunction, and examined the radiation dose required to induce otitis media with effusion.
The function of 36 Eustachian tubes in 18 patients with head and neck cancer were examined sonotubometrically before, during, and 1, 2 and 3 months after, intensity-modulated radiotherapy. Patients with an increase of 5 dB or less in sound pressure level (dB) during swallowing were categorised as being in the dysfunction group. Additionally, radiation dose distributions were assessed in all Eustachian tubes using three dose–volume histogram parameters.
Twenty-two of 25 normally functioning Eustachian tubes before radiotherapy (88.0 per cent) shifted to the dysfunction group after therapy. All ears that developed otitis media with effusion belonged to the dysfunction group. The radiation dose threshold evaluation revealed that ears with otitis media with effusion received significantly higher doses to the Eustachian tubes.
The results indicate a relationship between radiation dose and Eustachian tube dysfunction and otitis media with effusion.
Public stigma alters attitudes towards people with mental illness, and is a particular concern for young people since most mental health problems occur in adolescence and young adulthood. However, little is known about the long-term effects of repeated filmed social contact (FSC) on reducing mental health-related stigma among young adults in the general population, compared with self-instructional Internet search (INS) and control interventions.
This study is a parallel-group randomised controlled trial over 12 months conducted in Tokyo, Japan. A total of 259 university students (male n = 150, mean age = 20.0 years, s.d. = 1.2) were recruited from 20 colleges and universities between November 2013 and July 2014, without being provided information about the mental health-related survey or trial. Participants were assigned to one of three groups before completion of the baseline survey (FSC/INS/control = 89/83/87). The FSC group received a computer-based 30-min social contact film with general mental health education and five follow-up web-based FSCs at 2-month intervals. The INS group undertook a 30-min search for mental health-related information with five follow-up web-based reminders for self-instructional searches at 2-month intervals. The control group played PC games and had no follow-up intervention. The main outcome measures were the future (intended behaviour) domain of the Reported and Intended Behaviour Scale at 12 months after the intervention. Analysis was conducted in September 2015.
At the 12-month follow-up, 218 participants completed the survey (84.1%, 75:70:73). The FSC group showed the greatest change at the 12-month follow-up (FSC: mean change 2.11 [95% CI 1.49, 2.73], INS: 1.04 [0.29, 1.80], control: 0.71 [0.09, 1.33]; FSC v. INS p = 0.037, FSC v. controls p = 0.004). No adverse events were reported during the follow-up period.
FSC was more successful in reducing stigma at 12 months after intervention than INS or control interventions. FSC could be used to reduce stigma in educational lectures and anti-stigma campaigns targeted at young people.
This study is registered at UMIN-CTR (No. UMIN000012239).
We have conducted 1.1 mm ALMA observations of a contiguous 105” × 50” or 1.5 arcmin2 window in the SXDF-UDS-CANDELS. We achieved a 5σ sensitivity of 0.28 mJy, giving a flat sensus of dusty star-forming galaxies with LIR ~6×1011L⊙ (if Tdust=40K) up to z ~ 10 thanks to the negative K-correction at this wavelength. We detected 5 brightest sources (S/N>6) and 18 low-significant sources (5>S/N>4; they may contain spurious detections, though). One of the 5 brightest ALMA sources (S1.1mm = 0.84 ± 0.09 mJy) is extremely faint in the WFC3 and VLT/HAWK-I images, demonstrating that a contiguous ALMA imaging survey uncovers a faint dust-obscured population invisible in the deep optical/near-infrared surveys. We find a possible [CII]-line emitter at z=5.955 or a low-z CO emitting galaxy within the field, allowing us to constrain the [CII] and/or CO luminosity functions across the history of the universe.
There is an increased need for highly sensitive imaging devices to develop high resolution and high speed image sensors. Incident light intensity per pixel of image sensors is getting lower because the pixel resolution and frame rate of image sensors are becoming higher. We investigated the feasibility of using a photoconductor with tin-doped gallium oxide (Ga2O3:Sn)/Cu(In,Ga)Se2 (CIGS) hetero-junction for visible light image sensors. CIGS chalcopyrite thin films have great potential for improving the sensitivity of image sensors and CIGS chalcopyrite semiconductors have both a high absorption coefficient and high quantum efficiency. Moreover, the band gap can be adjusted for visible light. We applied Ga2O3 as an n-type semiconductor layer and a hole-blocking layer to CIGS thin film to reduce the dark current. The experimental results revealed that dark current was drastically reduced due to the application of Ga2O3 thin film, and an avalanche multiplication phenomenon was observed at an applied voltage of over 6 V. However, non-doped Ga2O3/CIGS hetero-junction only had sensitivity in the ultraviolet light region because their depletion region was almost completely spread throughout the Ga2O3 layer due to the low carrier density of the Ga2O3 layer. Therefore, we used Ga2O3:Sn for the n-type layer to increase carrier density. As a result, the depletion region shifted to the CIGS film and the cells had sensitivity in all visible regions. These results indicate that Ga2O3:Sn/CIGS hetero-junction are feasible for visible light photoconductors.
Highly transparent composite electrodes made of multilayers of In- and Ga-doped ZnO and Cu (IGZO/Cu/IGZO) thin films (30/3-9/30 nm thick) are deposited onto flexible substrates at room temperature and by using radio frequency magnetron sputtering. The effect of Cu thickness on the electrical and optical properties of the multilayer stack has been studied in accordance with the Cu morphology. The optical and electrical properties of the multilayers are studied with the UV–Vis spectrophotometry, Hall measurement and four point probe analyses. Results are compared with those from a single IGZO layered thin film. The average optical transmittance and sheet resistance both decreases with increase of copper thickness and has been optimized at 6 nm Cu middle layer thickness. The Haacke figure of merit (FOM) has been calculated to evaluate the performance of the films. The highest FOM achieved is 6 x 10-3 Ω-1 for a Cu thickness of 6 nm with a sheet resistance of 12.2 Ω/sq and an average transmittance of 86%. The multilayered thin films are annealed upto 150 °C in vacuum, forming gas and O2 environments and the optical and electrical properties are studied and compared against the as-deposited samples. Thus IGZO/Cu/IGZO multilayer is a promising flexible electrode material for the next-generation flexible optoelectronics.
The fabrication of a thin film optoelectronic device involves the exposure of the transparent conductive oxide (TCO) to a high process temperature. Indium gallium zinc oxide (InGaZnO4 or IGZO) is a well known TCO with high optical transparency, moderate conductivity and high mobility. However, its electrical properties deteriorate after subsequent high temperature processes in air atmosphere. On the other hand indium tin oxide (ITO) has higher conductivity than IGZO and better thermal stability. Therefore, IGZO/ITO bilayers have been deposited on glass by radio frequency magnetron sputtering at room temperature and subsequently annealed at high temperatures in order to study their thermal stability. In the present work, a-IGZO layers with a thickness ranging from 10 nm to 100 nm were deposited over a 50 nm thick ITO layer. Results are compared with those from a single IGZO layered thin film without the ITO bottom layer. The structural, optical and electrical properties of the multilayers are studied with the use of scanning electron microscopy, UV–Vis spectroscopy and Hall measurement. An IGZO optimal thickness of 50 nm is found to improve the bilayer thermal stability at temperatures upto 400 °C keeping good opto-electrical properties. The sheet resistance for the optimized IGZO/ITO composite films is about 22 Ohm/sq, and the transmittance in the visible range is about 90%. The composite shows an excellent mobility above 40 cm2 /V-s and thus can be potentially applied as channel layer in thin film transistors (TFTs)
The feasibility of using a photoconductor with a Ga2O3/CuGaSe2 heterojunction for visible light sensors was investigated. CIGS chalcopyrite semiconductors have both a high absorption coefficient and high quantum efficiency. However, their dark current is too high for image sensors. In this study, we applied gallium oxide (Ga2O3) as a hole-blocking layer for CIGS thin film to reduce the dark current. Experimental results showed that the dark current was drastically reduced, and an avalanche multiplication phenomenon was observed at an applied voltage of over 6 V. However, this structure had sensitivity only in the ultraviolet light region because its depletion region was almost completely spread in the Ga2O3 layer since the carrier density of the Ga2O3 layer was much lower than that of the CIGS layer. These results indicate that the Ga2O3/CuGaSe2 heterojunction has potential for use in visible light sensors but that we also need to increase the carrier density of the Ga2O3 layer to shift the depletion region to the CIGS film.
This study aimed to investigate the function of tissue plasminogen activator in the olfactory epithelium of mice following neural injury.
Transmission electron microscopy was used to study the changes in the morphology of the olfactory epithelium 1–7 days after surgical ablation of the olfactory bulb (bulbectomy).
Prior to bulbectomy, a uniformly fine material was observed within some regions of the olfactory epithelium of mice deficient in tissue plasminogen activator. At 2–3 days after bulbectomy, there were degenerative changes in the olfactory epithelium. At 5–7 days after bulbectomy, we noted drastic differences in olfactory epithelium morphology between mice deficient in tissue plasminogen activator and wild-type mice (comparisons were made using findings from a previous study). The microvilli seemed to be normal and olfactory vesicles and receptor neuron dendrites were largely intact in the olfactory epithelium of mice deficient in tissue plasminogen activator.
The tissue plasminogen activator plasmin system may inhibit the regeneration of the olfactory epithelium in the early stages following neural injury.
It is difficult to get a real scale image of the solar system through lecture. A scale model is a classical and one of good solutions (e.g. Handa et al.2003, Handa et al.2008). Through this model, people living in or visiting to the city can physically understand the scale of the solar system. This scale gives 1 cm for Earth's diameter and 115 m for 1 AU. However, some gadget is required to make it attractive for public citizens.
The contamination, distribution and pathogenicity of Toxocara canis and T. cati eggs in sandpits in the Tokyo metropolitan area, Japan, are described. A total of 34 sandpits were examined, 14 of which were contaminated with T. cati eggs, as assessed by the floatation method and polymerase chain reaction (PCR) analysis. Two naturally contaminated sandpits were investigated to determine the vertical and horizontal distribution of eggs, and an inverse relationship between the sand depth and number of eggs was observed. To examine the pathogenicity of the eggs, three ICR mice were inoculated with 300 eggs, which were recovered from sandpits. The mice exhibited eosinophilia in the peripheral blood and IgG antibody production in the sera after 3 weeks of infection. Most migrating larvae were recovered from carcasses, although three were found in the brains of two infected mice. These three larvae were determined to be T. canis by PCR, revealing that not only T. cati, but also T. canis eggs could be found in sandpits and, further, that eggs recovered from sandpits have the ability to invade a paratenic host.
Layer transfer and simultaneous activation of phosphorus atoms in Si films induced by semiconductor diode laser (SDL) irradiation have been investigated. Phosphorus-doped a-Si films supported by columns on a starting substrate (quartz) and a counter substrate (glass) were closely contacted face-to-face, and an 812 nm light from a SDL was irradiated to the a-Si films from the backside of the starting substrate. After SDL irradiation, 20μm wide and 1000μm long Si films were transferred to the counter substrate and were crystallized simultaneously. From optical microscope images, it was confirmed that the original form was completely maintained after the film transfer. The electrical conductivity of transferred Si film was as high as 708 S/cm. Hall measurement of the films revealed very high electron concentration of 9.5×1020 cm-3, which indicated efficient doping is achieved by the laser transfer technique.
The electrical characteristics of silicon nanowire (SiNW) solar cells with p-type hydrogenated amorphous silicon oxide (Eg=1.9 eV)/n-type SiNWs embedded in SiO2/n-type hydrogenated amorphous silicon (Eg=1.7 eV) structure have been investigated using a two-dimensional device simulator with taking the quantum size effects into account. The average bandgap of a SiNW embedded in SiO2 increased from 1.15 eV to 2.71 eV with decreasing the diameter from 10 nm to 1 nm due to the quantum size effect. It should be noted that under the sunlight with AM1.5G the open-circuit voltage (Voc) of SiNW solar cells also increased to 1.54 V with decreasing the diameter of the SiNWs to 1 nm. This result suggests that it is possible to enhance the Voc by the quantum size effect and a SiNW is a promising material for the all silicon tandem solar cells.