In this paper, a three-dimensional finite-element modeling is performed for the analyses of Chalcogenide Random Access Memory (C-RAM), a non-rotation nonvolatile phase change memory cell. The thermal effect generated by an incident electric pulse was mainly discussed. Thermal performances of the cell as a result of electrical and geometrical variations were quantified. Current density distribution, temperature profiles, temperature history, heating rate, cooling rate, and heat flow characteristics were obtained and analyzed. The study is useful for the failure analysis of the C-RAM.