To send content items to your account,
please confirm that you agree to abide by our usage policies.
If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account.
Find out more about sending content to .
To send content items to your Kindle, first ensure email@example.com
is added to your Approved Personal Document E-mail List under your Personal Document Settings
on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part
of your Kindle email address below.
Find out more about sending to your Kindle.
Note you can select to send to either the @free.kindle.com or @kindle.com variations.
‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi.
‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.
This is a copy of the slides presented at the meeting but not formally written up for the volume.
Description: Semiconductor physics contains a rich body of theory and working designs. However, their material properties seem to be reaching their limits. Perovskite oxides on the other hand have abundant physical properties, but are still under active investigation. The advent of RHEED-monitoring of pulsed laser deposition allows for the fabrication of structures with single unit cell (4 Å) thick layers. In this way we may be able to fabricate quantum well structures for both applications and fundamental investigations. Superlattices of the Mott insulator LaTiO3 (LTO) and the band gap insulator SrTiO3 (STO) form such a structure. The superlattices are metallic, both as-grown and post-annealed . This has been attributed to the existence of metallic states at the interfaces between LTO and STO . At these interfaces the electron density is found to extend about 10 Å into the STO. However, theoretically, the required length scale for quantum confinement is of the order of 4 Å. A possible way to increase this confinement is to use a buffer material with a larger band gap than that of LTO (similar to semiconductor band gap engineering) and/or with a lower dielectric constant . LaAlO3 (LAO) is such a material (ΔELAO = 5.6 eV vs. ΔESTO = 3.2 eV, εLAO = 24 vs. εSTO = 300). Here we report on the growth of LTO/LAO superlattices on STO substrates. As-grown superlattices of LTO/LAO are metallic, while post-annealing turns them insulating. This may be explained from a disorder-order transition in a 2D Mott-Hubbard model . XPS and EELS measurements of the titanium valence show interesting differences for LTO layers close to and far away from the sample surface. The former, for thin LAO capping layers, show the presence of Ti4+ while the latter only have Ti3+. Hard XPS of samples with varying capping layer thickness shows an exponential dependence of the Ti3+ contents on a length scale of about 5 unit cells.  A. Ohtomo et al., Nature 419, 378-380 (2002).  S. Okamoto & A.J. Millis, Phys. Rev. B 70, 075101 (2004).  D. Heidarian & N. Trivedi, Phys. Rev. Lett. 93, 126401 (2004).
We report the investigation on the properties of a novel Te precursor (i-C3H7)2Te and its effectiveness in fabricating MoTe2. The vapor pressure of the precursor was obtained by measuring the pressure as a function of its temperature in a sealed chamber. As a result it showed a high vapor pressure of 552.1 Pa at room temperature. The decomposition of the precursor was also investigated using DFT calculation. It was shown that the most likely reaction during the course of the decomposition of (i-C3H7)2Te is (i-C3H7)2Te → H2Te + 2 C3H7. The effectiveness of the precursor on the fabrication of MoTe2 was also investigated. Sputter-deposited MoO3 was tellurized in a quartz-tube furnace at the temperature up to 440°C. The resulting film showed that the 80% of the original MoO3 was tellurized to form MoTe2. It was also shown that further optimization of tellurization is required in order to prevent formation of metal Mo and elemental Te.
The Baltic Sea is a semi-enclosed brackish water basin where sea ice occurs annually. The sea-ice study discussed here was conducted as a Finnish-Japanese cooperative research programme entitled "Ice Climatology of the Okhotsk and Baltic Seas’’ to investigate the structure and properties of the brackish ice in the Baltic Sea. Ice, snow and water samples were collected at Santala Bay, near the mouth of the Gulf of Finland, once a week from 20 January to 12 April 1999. The salinity and oxygen isotopic composition (δ18O) of the samples were measured. The ice samples were analyzed stratigraphically. The ice was composed of a granular upper layer, occupying approximately one-third of the entire ice thickness, and underlying columnar ice toward the bottom. The crystallography structure and δ18O values reveal that the granular ice consisted of two layers with different origins, i.e. snow ice and superimposed ice. The fraction of snow relative to the total thickness was estimated. The limited data show a significant contribution of the snow cover to the sea-ice development. The salinity of the granular ice was higher than that of the columnar ice, implying that the mechanism of entrapment of brine may be different between the two ice types.
We have made a preliminary map of the Horsehead nebula in CO (J=1-0) using the NRO 45-m telescope. The HPBW is 15″, the grid spacing 10″, and the velocity resolution is ∼0.1km/s. Figure 1 shows the integrated intensity with a velocity interval 10-11.5 km/s, which we found represents well the shape of the dark globule of the Horsehead. The coincidence of the CO feature and the dark nebulocity is strikingly well, especially at the sharp edges in the south and in the west (from the neck to the ears). The quality of the data are not satisfactory, though. The typical noise level is 1 K rms in TA, and the accuracies of the pointing and the intensity calibration is rather low due to the bad weather during the observation. Some scanning effects in the intensities can be recognized in Figure 1. One of the reason why the gap obtically seen beneath the jaw is not clear in the CO map may be attributed to the pointing errors.
We report the synthesis of MoS2(1-x)Te2x by co-sputtering deposition and effect of mixture on its bandgap. The deposition was carried out at room temperature, and the sputtering power on individual MoS2 and MoTe2 targets were varied to obtain films with different compositions. Investigation with X-ray photoelectron spectroscopy confirmed the formation of Mo-Te and Mo-S bonds after post-deposition annealing (PDA), and one of the samples exhibited composition ratio of Mo:S:Te = 1:1.2:0.8 and 1:1.9:0.1 achieving 1:2 ratio of metal to chalcogen. Bandgap of MoS1.2Te0.8 and MoS1.9Te0.1 was evaluated with Tauc plot analysis from the extinction coefficient obtained by spectroscopic ellipsometry measurements. The obtained bandgaps were 1.0 eV and 1.3 eV. The resulting bandgap was lower than that of bulk MoS2 and higher than that of bulk MoTe2 suggesting mixture of both materials was achieved by co-sputtering.
Molybdenum disulfide (MoS2) thin films were fabricated by two-step chemical vapor deposition (CVD) using (t-C4H9)2S2 and the effects of temperature, gas flow rate, and atmosphere on the formation were investigated in order to achieve high-speed low-temperature MoS2 film formation. From the results of X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) investigations, it was confirmed that c-axis orientation of the pre-deposited Mo film has a significant involvement in the crystal orientation after the reaction low temperature sulfurization annealing and we successfully obtained 3 nm c-axis oriented MoS2 thin film. From the S/Mo ratios in the films, it was revealed that the sulfurization reaction proceeds faster with increase in the sulfurization temperature and the gas flow rate. Moreover, the sulfurization under the H2 atmosphere promotes decomposition reaction of (t-C4H9)2S2, which were confirmed by XPS and density functional theory (DFT) simulation.
The reorientation phenomenon of a single red blood cell during sedimentation is simulated using the boundary element method. The cell settles downwards due to a density difference between the internal and external fluids, and it changes orientation toward a vertical orientation regardless of Bond number or viscosity ratio. The reorientation phenomenon is explained by a shape asymmetry caused by the gravitational driving force, and the shape asymmetry increases almost linearly with the Bond number. When velocities are normalised by the driving force, settling/drifting velocities are weak functions of the Bond number and the viscosity ratio, while the angular velocity of the reorientation drastically changes with these parameters: the angular velocity is smaller for lower Bond number or higher viscosity ratio. As a consequence, trajectories of the sedimentation are also affected by the angular velocity, and blood cells with slower reorientation travel longer distances in the drifting direction. We also explain the mechanism of the reorientation using an asymmetric dumbbell. From the analysis, we show that the magnitude of the angular velocity is explained by two main factors: the shape asymmetry and the instantaneous orientation angle.
Although presently classified as a SU UMa-type dwarf nova, WZ Sge is well known as one of the most peculiar objects in that it shows only superoutbursts with exceptional duration and amplitude, and no normal outbursts. Furthermore, on its decline from the 1978 outburst, WZ Sge showed a deep temporal dip. All of these characteristics have puzzled both theoreticians and observers.
The dwarf nova AL Com was photometrically observed during the outburst in 1995 April, which occurred for the first time since 1975. The striking similarity of AL Com to WZ Sge, as demonstrated by the present observation (Fig. 1), provides plenty of material in interpreting the enigmatic nature of WZ Sge-type dwarf novae.
We present a numerical analysis of the rheology of a dense suspension of spherical capsules in simple shear flow in the Stokes flow regime. The behaviour of neo-Hookean capsules is simulated for a volume fraction up to
by graphics processing unit computing based on the boundary element method with a multipole expansion. To describe the specific viscosity using a polynomial equation of the volume fraction, the coefficients of the equation are calculated by least-squares fitting. The results suggest that the effect of higher-order terms is much smaller for capsule suspensions than rigid sphere suspensions; for example,
terms account for only 8 % of the specific viscosity even at
for capillary numbers
. We also investigate the relationship between the deformation and orientation of the capsules and the suspension rheology. When the volume fraction increases, the deformation of the capsules increases while the orientation angle of the capsules with respect to the flow direction decreases. Therefore, both the specific viscosity and the normal stress difference increase with volume fraction due to the increased deformation, whereas the decreased orientation angle suppresses the specific viscosity, but amplifies the normal stress difference.
Molybdenum disulfide (MoS2), one of the transition-metal dichalcogenides, is a 2-dimensional semiconducting material that has a layered structure. Owing to excellent optical and electronic properties, the ultra-thin MoS2 film is expected to be used for various devices, such as transistors and flexible displays. In this study, we investigated the physical and chemical properties of sputtered-MoS2 film in the sub-10-nm region by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). As the results of Raman spectroscopy investigations, we observed two Raman modes, E12g and A1g, in the 2-dimensional MoS2 films. As the thickness of the MoS2 film decreased, the peak frequency difference between E12g and A1g modes increased. From the XPS investigations, we confirmed sulfur reductions from the 2-dimensional MoS2 films. Therefore, we considered that the sulfur vacancies in the MoS2 film affected the Raman peak positions. Moreover, we performed the additional sulfurization of sputtered-MoS2 films. From the XPS and Raman investigations, the quality of the sputtered-MoS2 films was improved by the additional sulfurization.
A fully coherent free electron laser (FEL) seeded with a higher-order harmonic (HH) pulse from high-order harmonic generation (HHG) is successfully operated for a sufficiently prolonged time in pilot user experiments by using a timing drift feedback. For HHG-seeded FELs, the seeding laser pulses have to be synchronized with electron bunches. Despite seeded FELs being non-chaotic light sources in principle, external laser-seeded FELs are often unstable in practice because of a timing jitter and a drift between the seeding laser pulses and the accelerated electron bunches. Accordingly, we constructed a relative arrival-timing monitor based on non-invasive electro-optic sampling (EOS). The EOS monitor made uninterrupted shot-to-shot monitoring possible even during the seeded FEL operation. The EOS system was then used for arrival-timing feedback with an adjustability of 100 fs for continual operation of the HHG-seeded FEL. Using the EOS-based beam drift controlling system, the HHG-seeded FEL was operated over half a day with an effective hit rate of 20%–30%. The output pulse energy was
at the 61.2 nm wavelength. Towards seeded FELs in the water window region, we investigated our upgrade plan to seed high-power FELs with HH photon energy of 30–100 eV and lase at shorter wavelengths of up to 2 nm through high-gain harmonic generation (HGHG) at the energy-upgraded SPring-8 Compact SASE Source (SCSS) accelerator. We studied a benefit as well as the feasibility of the next HHG-seeded FEL machine with single-stage HGHG with tunability of a lasing wavelength.
The deformation of a spherical capsule in oscillating shear flow is presented. The boundary element method is used to simulate the capsule motion under Stokes flow. We show that a capsule at high frequencies follows the deformation given by a leading-order prediction, which is derived from an assumption of small deformation limit. At low frequencies, on the other hand, a capsule shows an overshoot phenomenon where the maximum deformation is larger than that in steady shear flow. A larger overshoot is observed for larger capillary number or viscosity ratio. Using the maximum deformation in start-up shear flow, we evaluate the upper limit of deformation in oscillating shear flow. We also show that the overshoot phenomenon may appear when the quasi-steady orientation angle under steady shear flow is less than
. We propose an equation to estimate the threshold frequency between the low-frequency range, where the capsule may have an overshoot, and the high-frequency range, where the deformation is given by the leading-order prediction. The equation only includes the viscosity ratio and the Taylor parameter under simple shear flow, so it can be extended to other deformable particles, such as bubbles and drops.
Polysilsesquioxane passivation layers were used to passivate bottom gate a-InGaZnO (a-IGZO) thin film transistors (TFT). The a-IGZO TFTs passivated with polysilsesquioxane showed highly stable behavior during positive bias stress, negative bias stress, and negative bias illumination stress. A voltage threshold shift of up to 0.1 V, less than -0.1 V and -2.3 V for positive bias stress, negative bias stress, and negative bias illumination stress, respectively. We also report the effect of reactive ion etching (RIE) on the electrical characteristics of a-InGaZnO (a-IGZO) thin-film transistors (TFT) passivated with the polysilsesquioxane-based passivation layers. We show how post-annealing treatment using two different atmosphere conditions: under O2 ambient and combination of N2 and O2 ambient (20% O2), can be performed to recover the initial characteristics. Furthermore, we present a highly stable novel polysilsesquioxane photosensitive passivation material that can be used to completely circumvent the reactive ion etching effects.