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We present angle-resolved photoemission measurements for ultrathin In films on Si(111). Depending on the coverage, this system self-organizes into a metallic monolayer with either 4×1 or √7×√3 symmetry relative to the substrate. Electronically, they behave like ideal one- and two-dimensional electron gases (1DEG and 2DEG), respectively. The 4×1 system has atomic chains of In whose energy bands disperse only parallel to the chains, while for the √7×√3 system, the dominant reciprocal space features (in both diffraction and bandstructure) resemble a pseudo-square lattice with only weaker secondary features relating to the √7×√3 periodicity. In both materials the electrons show coupling to the structure. The 1DEG couples strongly to phonons of momentum 2kF, leading to an 8×“2” Peierls-like insulating ground state. The 2DEG appears to be partially stabilized by electron gap formation at the √7×√3 zone boundary.
Epitaxial (GaAs)1−x (Si2)x metastable alloys have been grown on GaAs (100) substrates using Migration-Enhanced Epitaxy in the composition range of 0<x<0.25. The lattice constant a0 of the alloys was found to decrease with increasing Si content from 0.56543nm at x=0 to 0.5601nm at x=0.25. Double-crystal x-ray diffraction rocking curve measurements and cross-sectional transmission electron microscopy studies made on a 10 period (GaAs)1−x(Si2)x/GaAs strained layer superlattice indicated sharp and abrupt interfaces. High crystalline quality GaAs has been grown on Si substrates using (GaAs)0.80(Si2)0.20/GaAs strained layer superlattices as buffer layers.
We developed a photosensitive film using a polymer blend for use in applications that require a high density of interconnects. Our film can be used as a dielectric or a passivation layer in high density packaging technologies. We formed vias about 20 μm in diameter using our new materials.
The bulk crystal of silicon germanium was grown by vertical Bridgman method with germanium composition, x, varying from 0.6 to 1.0. The temperature dependent variation of the mobility is indicative of alloy scattering dominantly for the bulk wafer. Phosphorus was diffused in as-grown p-type bulk wafer at 850 °C to form pn-junction, and the diffusion coefficient of phosphorus was evaluated as a function of x. The diffusion behavior of phosphorus in silicon germanium is closely correlated with the germanium self-diffusion with changing x. For specimens with lower content x, P concentration profiles indicated “kink and tail” shape, while it was not observed for higher x. For current-voltage characteristics measurement, an ideality factor was obtained.
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