We have studied the formation of surface blisters in <100> n-type silicon following coimplantation with boron and hydrogen. In this work we study the effect of having the boron depth larger than the hydrogen depth. The silicon substrates had four different dopant levels, ranging from 1014 cm−3 to 1019 cm−3. The Si substrates were first implanted with B ions at 240 keV (Rp = 705nm) to a dose of 1015cm−2. Some of the B implanted samples were left in their as-implanted state, others were given a rapid thermal anneal (RTA) at 900°C. Boron implanted and virgin n-type Si samples were then implanted at cryogenic temperatures with 40 keV H+ (Rp= 475nm) to a dose of 5 x 1016 cm−2. Following H+ implantation, all the samples were vacuum annealed at 390°C for 10 minutes and examined for hydrogen blister formation. No blistering was observed in samples implanted with H only. In all cases, the blister depth was consistently found to be strongly correlated with H damage profile rather than the H or B concentration profiles. These results will be discussed in terms of defect-dopant interactions and the influence of doping on H kinetics and H-bubble nucleation.