Titanium disilicide obtained by direct interaction between Si and a deposited Ti layer is a choice for low- resistance gate interconnections and source and drain areas. The properties of the TiSi2 film can be influenced by many factors; such as substrate nature and doping, the depositing Ti layer, structure dimensions . This work is addressed to study the properties of TiSi2 film as obtained from titanium deposited by Ion Metal Plasma (IMP), which has recently been introduced in high aspect ratio contact and via applications.
Its suitability for titanium silicide formation is investigated here in comparison to standard PVD deposition. The study was carried out on flat and patterned samples. Titanium silicide formed on mono- Si substrates were characterized as a function of RTP temperature in terms of sheet resistance, tilm morphology, crystallography and phase evolution. It was found that the TiSi2 film obtained from IMP- Ti is very similar to the one obtained from PVD standard deposition. However, for annealing below 700°C, an increase in the sheet resistance of the TiSi2 C49 phase from IMP- Ti compared to the one from PVD- Ti was found, and is explained by different silicide grain size. Analyses performed on patterned samples with doped silicon and poly- Si lines show similar electrical results for TiSi2 from IMP and PVD deposition; however, fbr p+ poly-Si lines, the IMP samples displayed correct TiSi2 formation down to 0.18µm line width, while the PVD wafers showed discontinuous results at these minimum feature sizes.