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This study aimed to highlight the key studies that have led to the current understanding and treatment of head and neck cancer.
The Thomson Reuters Web of Science database was used to identify relevant manuscripts. The results were ranked according to the number of citations. The 100 most cited papers were analysed.
A total of 63 538 eligible papers were returned. The median number of citations was 626. The most cited paper compared radiotherapy with and without cetuximab (3205 citations). The New England Journal of Medicine had the most citations (23 514), and the USA had the greatest number of publications (n = 66). The most common topics of publication were the treatment (n = 45) and basic science (n = 19) of head and neck cancer, followed by the role of human papillomavirus (n = 16).
This analysis highlighted key articles that influenced head and neck cancer research and treatment. It serves as a guide as to what makes a ‘citable’ paper in this field.
Abnormal effort-based decision-making represents a potential mechanism underlying motivational deficits (amotivation) in psychotic disorders. Previous research identified effort allocation impairment in chronic schizophrenia and focused mostly on physical effort modality. No study has investigated cognitive effort allocation in first-episode psychosis (FEP).
Cognitive effort allocation was examined in 40 FEP patients and 44 demographically-matched healthy controls, using Cognitive Effort-Discounting (COGED) paradigm which quantified participants’ willingness to expend cognitive effort in terms of explicit, continuous discounting of monetary rewards based on parametrically-varied cognitive demands (levels N of N-back task). Relationship between reward-discounting and amotivation was investigated. Group differences in reward-magnitude and effort-cost sensitivity, and differential associations of these sensitivity indices with amotivation were explored.
Patients displayed significantly greater reward-discounting than controls. In particular, such discounting was most pronounced in patients with high levels of amotivation even when N-back performance and reward base amount were taken into consideration. Moreover, patients exhibited reduced reward-benefit sensitivity and effort-cost sensitivity relative to controls, and that decreased sensitivity to reward-benefit but not effort-cost was correlated with diminished motivation. Reward-discounting and sensitivity indices were generally unrelated to other symptom dimensions, antipsychotic dose and cognitive deficits.
This study provides the first evidence of cognitive effort-based decision-making impairment in FEP, and indicates that decreased effort expenditure is associated with amotivation. Our findings further suggest that abnormal effort allocation and amotivation might primarily be related to blunted reward valuation. Prospective research is required to clarify the utility of effort-based measures in predicting amotivation and functional outcome in FEP.
TAOS II is a next-generation occultation survey with the goal of measuring the size distribution of the small end of the Kuiper Belt (objects with diameters 0.5–30 km). Such objects have magnitudes r > 30, and are thus undetectable by direct imaging. The project will operate three telescopes at San Pedro Mártir Observatory in Baja California, México. Each telescope will be equipped with a custom-built camera comprised of a focal-plane array of CMOS imagers. The cameras will be capable of reading out image data from 10,000 stars at a cadence of 20 Hz. The telescopes will monitor the same set of stars simultaneously to search for coincident occultation detections, thus minimising the false-positive rate. This talk described the project, and reported on the progress of the development of the survey infrastructure.
Kuratite, ideally Ca4(Fe2+10Ti2)O4[Si8Al4O36], the Fe2+-analogue of rhönite and a new member of the sapphirine supergroup, was identified from the D'Orbigny angrite meteorite by electron microscopy and micro-Raman spectroscopy. Based on the least-squares refinement of 25 d-spacings measured from selected-area electron diffraction patterns of 11 zone axes, the symmetry of kuratite was shown to be triclinic (space group by analogy to rhönite) with a = 10.513(7), b = 10.887(7), c = 9.004(18) Å, α = 105.97(13), β = 96.00(12), γ = 124.82(04)°, V = 767 ± 2 Å3 and Z = 1 for the 40 oxygen formula. The empirical formula based on eight electron microprobe analyses is (Ca3.88Na0.02REE3+0.03Mn0.03Mg0.01Ni0.02Zn0.01Sr0.01)∑4.01 (Fe2+9.989.9Ti2.00)∑11.98(Si7.80Al3.52Fe3+0.64P0.05S0.02)∑12.03O39.98F0.01Cl0.01. The simplified formula is Ca4(Fe2+10Ti2)O4[Si8Al4O36]. Micro-Raman spectroscopy showed four main bands resembling those of lunar rhönite but with higher frequencies due to different chemical composition. Analogous to the occurrence of kuratite in terrestrial basaltic rocks, kuratite coexisting with Al, Ti-bearing hedenbergite, ulvöspinel, iron-sulfide, tsangpoite, Ca-rich fayalite and kirschsteinite in D'Orbigny angrite most probably was formed at >1000°C by rapid cooling of an interstitial melt, which is subsilicic, almost Mg-free but enriched in Al-P-Ca-Ti-Fe.
This study examined the temporal and spatial patterns of diarrhoea in relation to hydro-meteorological factors in the Mekong Delta area in Vietnam. A time-series design was applied to examine the temporal pattern of the climate–diarrhoea relationship using Poisson regression models. Spatial analysis was applied to examine the spatial clusters of diarrhoea using Global Moran's I and local indicators of spatial autocorrelation (LISA). The temporal pattern showed that the highest peak of diarrhoea was from weeks 30–42 corresponding to August–October annually. A 1 cm increase in river water level at a lag of 1 week was associated with a small [0·07%, 95% confidence interval (CI) 0·01–0·1] increase in the diarrhoeal rate. A 1 °C increase in temperature at lag of 2 and 4 weeks was associated with a 1·5% (95% CI 0·3−2·7) and 1·1% (95% CI 0·1−2·3) increase in diarrhoeal risk, respectively. Relative humidity and diarrhoeal risk were in nonlinear relationship. The spatial analysis showed significant clustering of diarrhoea, and the LISA map shows three multi-centred diarrhoeal clusters and three single-centred clusters in the research location. The findings suggest that climatic conditions projected to be associated with climate change have important implication for human health impact in the Mekong Delta region.
A Web-based training course with embedded video clips for reducing central line-associated bloodstream infections (CLABSIs) was evaluated and shown to improve clinician knowledge and retention of knowledge over time. To our knowledge, this is the first study to evaluate Web-based CLABSI training as a stand-alone intervention.
Background: The Consortium to Establish a Registry for Alzheimer's Disease Neuropsychological Assessment Battery (CERAD-NAB) offers information on the clinical diagnosis of Alzheimer's disease (AD) and gives a profile of cognitive functioning. This study explores the effects of age, education and gender on participants' performance on eight subtests in the Chinese-Cantonese version of the CERAD-NAB.
Methods: The original English version of the CERAD-NAB was translated and content-validated into a Chinese-Cantonese version to suit the Hong Kong Chinese population. The battery was administered to 187 healthy volunteers aged 60 to 94 years. Participants were excluded if they had neurological, medical or psychiatric disorders (including dementia). Stepwise multiple linear regression analyses were performed to assess the relative contribution of the demographic variables to the scores on each subtest.
Results: The Cantonese version of CERAD-NAB was shown to have good content validity and excellent inter-rater reliability. Stepwise multiple regression analyses revealed that performances on seven and four out of eight subtests in the CERAD-NAB were significantly influenced by education level and age, respectively. Age and education had significant effects on participants' performance on many tests. Gender also showed a significant effect on one subtest.
Conclusions: The preliminary data will serve as an initial phase for clinical interpretation of the CERAD-NAB for Cantonese-speaking Chinese elders.
We are presently using the Chandra X-ray Observatory to conduct the first systematic X-ray survey of planetary nebulae (PNe) in the solar neighborhood. The Chandra Planetary Nebula Survey (ChanPlaNS) is a 570 ks Chandra Cycle 12 Large Program targeting 21 high-excitation PNe within ~1.5 kpc of Earth. When complete, this survey will provide a suite of new X-ray diagnostics that will inform the study of late stellar evolution, binary star astrophysics, and wind interactions. Among the early results of ChanPlaNS (when combined with archival Chandra data) is a surprisingly high detection rate of relatively hard X-ray emission from CSPNe. Specifically, X-ray point sources are clearly detected in roughly half of the ~30 high-excitation PNe observed thus far by Chandra, and all but one of these X-ray-emitting CSPNe display evidence for a hard (few MK) component in their Chandra spectra. Only the central star of the Dumbbell appears to display “pure” hot blackbody emission from a ~200 kK hot white dwarf photosphere in the X-ray band. Potential explanations for the“excess” hard X-ray emission detected from the other CSPNe include late-type companions (heretofore undetected, in most cases) whose coronae have been rejuvenated by recent interactions with the mass-losing WD progenitor, non-LTE effects in hot white dwarf photospheres, self-shocking variable winds from the central star, and slow (re-)accretion of previously ejected red giant envelope mass.
Because of the inherent desired material and technological attributes such as low temperature deposition and high uniformity over large area, the amorphous silicon (a-Si:H) technology has been extended to digital X-ray diagnostic imaging applications. This paper reports on design, fabrication, and characterization of a MIS-type photosensor that is fully process-compatible with the active matrix a-Si:H TFT backplane. We discuss the device operating principles, along with measurement results of the transient dark current, linearity and spectral response.
This paper uses three lubrication models to explore the differential phenomenon in the status of thin film lubrication (TFL). According to the viscous adsorption theory, the modified Reynolds equation for thin film elastohydrodynamic lubrication (TFEHL) is derived. In this theory, the film thickness between lubricated surfaces is simplified as three fixed layers across the film, and the viscosity and density of the lubricant vary with pressure in each layer. Under certain conditions, such as a rough or concentrated contact of a nominally flat surface, films may be of nanometer scale. The thin film elastohydrodynamic lubrication (EHL) analysis is performed on a surface forces (SF) model which includes van der waals and solvation forces. The results show that the proposed TFEHL model can reasonably calculate the film thickness and the average relative viscosity under thin film EHL. The adsorption layer thickness and the viscosity influence significantly the lubrication characteristics of the contact conjunction. The differences in pressure distribution and film shape between surface forces model and classical EHL model were obvious, especially in the Hertzian contact area. The solvation force has the greatest influence on pressure distribution.
Thin-film MEMS molecular sensors are fabricated at temperatures below 110°C on glass substrates. The microelectromechanical structure consists of a surface micromachined bilayer bridge of phosphorous-doped hydrogenated amorphous silicon and aluminum with a patterned SiO2 layer on the top. Specific binding of DNA to functionalized SiO2 on the bridge is confirmed using fluorescence microscopy. Microbridges are electrostatically actuated and the resonance frequency measurements are performed in vacuum in the initial state after fabrication, after the chemical functionalization of the SiO2surface and after DNA immobilization. The sensor is able to detect the functionalization molecular layer, the cross-linker molecular layer, and the DNA molecules attached to the surface through a shift in its resonance frequency. The binding of molecules to the surface results in a shift of the resonance frequency due to contributions from surface stresses and mass loading.
We show that SiGe grown on free-standing silicon is elastically relaxed. The free-standing Si structure consists of a ∼30 nm-thick, 5 μm-square silicon slab supported by a SiO2 pedestal at a single contact point at the center of the square (the cross-section resembles a mushroom). A matrix of free-standing structures was made by patterning a bonded silicon-on-insulator (SOI) wafer and undercutting the SiO2 to form the pedestal. Un-patterned areas of the SOI wafer and the exposed bulk Si substrate were included as reference regions. A UHVCVD Si0.8Ge0.2 film, about 200 nm-thick, was grown epitaxially on both sides of the free-standing silicon and the surrounding exposed bulk Si. The SiGe was also grown on the un-patterned SOI and bulk substrate control areas. The SiGe film grown on both SOI and bulk silicon was found to be fully strained. In contrast, the SiGe layer grown on free-standing silicon is ∼89% strain-relaxed, and the free-standing silicon film was measured to be under tensile strain. Since the same lattice mismatch was found between the SiGe layer and the Si on the free-standing silicon and on the SOI and bulk Si control regions, we conclude that the strain relaxation of the SiGe film on free-standing Si is elastic with the strain accommodated entirely by the free-standing silicon film under tensile strain. This was further confirmed by AFM measurements. The SiGe film on the control regions showed a very smooth SiGe surface with only a few surface steps originating from misfit dislocations at the SiGe/Si interface. No surface steps from misfit dislocations were observed on the surface of the SiGe film on free-standing Si. These results show that free-standing silicon serves as an ideal compliant substrate for SiGe.
Magnetotransport properties of Al0.22Ga0.78N/GaN modulation-doped heterostructures have been studied at low temperatures and high magnetic fields. The inter-subband scattering of the two-dimensional electron gas was observed. The inter-subband scattering is very weak and depends weakly on temperature when temperature is between 1.3 K and 10 K and becomes stronger with increasing temperature when temperature is higher than 10 K. The strain relaxation of the Al0.22Ga0.78N layer influences the inter-subband scattering. It is suggested that the inter-subband scattering is dominant by the elastic scattering when temperature is lower than 10 K, and changes to be dominant by the inelastic scattering of the acoustic phonons when temperature is higher than 10 K.
Undoped, 4µm thick GaN layers grown by Metal Organic Chemical Vapor Deposition were used for fabrication of high stand off voltage (356 V) Schottky diode rectifiers. The figure of merit VRB2/RON, where VRB is the reverse breakdown voltage and RON is the on-resistance, was ~ 4.53 MW-cm−2 at 25°C. The reverse breakdown voltage displayed a negative temperature coefficient, due to an increase in carrier concentration with increasing temperature. Secondary Ion Mass Spectrometry measurements showed that Si and O were the most predominant electrically active impurities present in the GaN.
We measured the response time zR and the ambipolar diffusion length Lamb in amorphous (a-Si:H) and microcrystalline silicon films (μ-Si:H) prepared by hot-wire chemical vapor deposition (HW-CVD). The response times in the amorphous and microcrystalline HW films were larger by factors of 100 and 1000, respectively, than in standard PE-CVD a-Si:H films (1-2 μs). The ambipolar diffusion length of the HW-CVD films was about twice as large as in conventional glow-discharge films. Strong doping of microcrystalline HW films with trimethylboron (TMB) led to a reduction of the response time. The results hint to a positive effect of the compact microstructure of HW-CVD films. We suggest the dark conductivity activation energy, Eact, and response time, τR, to be used as suitable parameters to describe optoelectronic film properties.
A void of cross sectional area A may spread perpendicular to the applied electric field Ea during electromigration because its leading surface develops a facet whose advance is limited by the supply of steps. If the facet is immobile (no step source) and the remaining surface is free to move, and if EaA is less than a threshold value, then the void assumes a stationary elongated shape dictated by a balance between capillarity and electric field. If EaA exceeds the threshold value, however, a balance is no longer possible, and the void spreads along the facet without arrest. If the facet has limited mobility, a balance is possible for all values of EaA, resulting in an elongated moving steady-state shape. The treatment simplifies the void shape as rectangular but preserves the essential features of capillarity and surface electromigration. We argue that the motion of a facet on a void along the outward normal requires defects (e.g. intersecting screw dislocations) that act as step sources since homogeneous nucleation of steps on the facet is expected to be negligible. Since voids in fine-line interconnects are often observed to be partially faceted, restricted void motion and resultant spreading which depend sensitively on crystallographic features, such as defect structure and grain orientation, may indeed limit the lifetime of fine-line interconnects in electronic devices.