To send content items to your account,
please confirm that you agree to abide by our usage policies.
If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account.
Find out more about sending content to .
To send content items to your Kindle, first ensure email@example.com
is added to your Approved Personal Document E-mail List under your Personal Document Settings
on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part
of your Kindle email address below.
Find out more about sending to your Kindle.
Note you can select to send to either the @free.kindle.com or @kindle.com variations.
‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi.
‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.
Hyperlipidaemia is a major cause of atherosclerosis and related CVD and can be prevented with natural substances. Previously, we reported that a novel Bacillus-fermented green tea (FGT) exerts anti-obesity and hypolipidaemic effects. This study further investigated the hypotriglyceridaemic and anti-obesogenic effects of FGT and its underlying mechanisms. FGT effectively inhibited pancreatic lipase activity in vitro (IC50, 0·48 mg/ml) and ameliorated postprandial lipaemia in rats (26 % reduction with 500 mg/kg FGT). In hypertriglyceridaemic hamsters, FGT administration significantly reduced plasma TAG levels. In mice, FGT administration (500 mg/kg) for 2 weeks augmented energy expenditure by 22 % through the induction of plasma serotonin, a neurotransmitter that modulates energy expenditure and mRNA expressions of lipid metabolism genes in peripheral tissues. Analysis of the gut microbiota showed that FGT reduced the proportion of the phylum Firmicutes in hamsters, which could further contribute to its anti-obesity effects. Collectively, these data demonstrate that FGT decreases plasma TAG levels via multiple mechanisms including inhibition of pancreatic lipase, augmentation of energy expenditure, induction of serotonin secretion and alteration of gut microbiota. These results suggest that FGT may be a useful natural agent for preventing hypertriglyceridaemia and obesity.
The YSTAR program is a general sky survey looking for variability. The main equipments are three 0.5-m telescopes. These telescopes have fast F/2 optics covering nearly 3.5 square degree field onto a 2K CCD. They also have very fast slew capability, which exceeds 10 degrees per second. These two factors make them most suitable for rapid target acquisition and wide-field surveys of various kinds. Our primary objective is to identify and monitor variable stars down to 18th R-magnitude, and our observing mode allows the same data set to be also useful in identifying asteroids. Our first telescope has just begun regular automated operation, and the second telescope will be installed in South Africa within this year to provide coverage of the southern sky.
Liposomal drug delivery products have been already commercialized in tumor therapeutics, which can realize passive tumor targeting via enhanced permeability and retention (EPR) effect resulting from the leaky tumor vasculature. To control drug release out of the liposomes, thermo-sensitive liposomes (TSLs) have been developed so that an abrupt exposure of highly concentrated drugs to tumor tissues was enabled by locally treated thermal stimuli. As interests upon TSL have increased along with ongoing clinical trials, some types of TSLs with different physical properties in pharmacokinetics and the mechanism of drug release have been formulated. However, there are few protocols established with a desirable heat source to maximize the efficacy of different TSLs as treating tumors. In this study, we examined different protocols for the most effective application of different TSLs to tumor therapy. First, we examined if enhancing the accumulation of TSLs within tumor tissues prior to bursting drugs out of TSLs could lead to increasing anti-tumor efficacy. Second, we compared the efficiency of two different heat sources on the use of TSL, a warm water bath (42°C) and high intensity focused ultrasound (HIFU). Our study suggests that the specified protocol be setup for TSLs with different physical properties to optimally function in tumor therapies.
We present experimental evidence of enhancement of thermoelectric properties in tellurium (Te) nanoparticle-embedded bismuth antimony telluride (BiSbTe) alloys. Bi0.5Sb1.5Te3 films with a high density of Te particles of 10–20 nm size were prepared by growth of alternating multilayers of ultrathin Te and Bi0.5Sb1.5Te3. As the amount of Te nanoinclusions increased up to ∼15%, the Seebeck coefficient and thermoelectric power factor were increased. Based on the concept of band bending at heterointerfaces as a carrier energy filter, the energy relaxation calculation was made to confirm that the Te nanoinclusions result in a carrier energy filtering effect in p-type bismuth antimony telluride. In addition, thermal conductivities were reduced in the Te-embedded samples, permitting possible further enhancement of the thermoelectric figure of merit. The advantages of Te nanoinclusions in p-type Bi0.5Sb1.5Te3alloys on thermoelectric performance are experimentally realized by both electron- and phonon scattering.
12Cr ODS steel samples were prepared by mechanical alloying of the metal powders with 20-30 nm Y2O3 particles followed by isostatic pressing, hot rolling and final heat treatment. Evolutions of oxide particles such as YTaO4 and YCrO3 after each fabrication step were investigated by using TEM with EDS. Crystallographic correlation between oxide particles and the matrix was investigated in a HIPped sample, and interactions between dislocations and oxide particles were observed in hot rolled or heat treated sample. Size distributions of oxide particles were measured by carbon replica samples and it was found that coarsening of oxide particles from 9 to 12 nm occurred during hot rolling process. Additional isothermal annealing at 1250 ˚C revealed that phase transformation of oxide particles from monoclinic YTaO4 to face centered cubic Y3TaO7 was observed.
This study was undertaken to derive the understandings of the electro- mechanical properties of ITO films on highly elongated polymer substrates which were subjected to thermally and mechanically stresses. The substrates are polycarbonate foils with 100, 180 and 200-mm thicknesses with gas barrier layer on their bottom surface. The metallic films used in the experiments are indium- tin-oxide (ITO) and tantalum (Ta) films. Strain- gauge measurements and numerical analyses using modified Stoney formula were carried out to determine the electro-mechanics in ITO films. The numerical analyses and empirical results show the thermally and externally induced mechanical stresses in ITO films on polymer substrates are responsible for the difference in thermal expansion between the ITO films and the substrate and for substrate material and thickness, respectively. Therefore, a ramped heating processing and a buffer layer were employed to improve the electro- mechanics, and then, the effects of the buffer layer were also quantified in terms of conductivity-strain variations.
A reliable interconnection of electrodes to the flexible polymer substrate with anisotropic conductive film (ACF) of which the conductive particles were similar in elasticity to the substrates was accomplished. The contact resistance value was maintained even while the junction was stressed under sudden changes in temperature and pressure. We found that the conduction failure is caused by the action of a complex mechanism on the changes of a joint structure. The major driving factor seems likely to be defects in the transparent electrodes due to the thermal strain of the substrate and penetration of conductive particles into the substrate. The materials of substrate and conductive particle are polycarbonate (PC) with a gas barrier layer and poly-divinylbenzene (DVB) whose hardness is similar to that of the polymer substrate, respectively. In this paper, several experiments were performed with an emphasis on the properties of polymer substrates. Furthermore, the electrical and mechanical performance of the joint structure was studied by evaluating contact resistance and scanning electron microscope (SEM) observations. Moreover, for the experiments, we fabricated test IC with Au bumps through photolithography and electro-plating process. Conductive particle with elasticity similar to that of the polymer substrates did little damage to the transparent electrodes on the substrates, and low temperature and pressure under a stepped process did not bring about their deformation either. Consequently, we adopted the results on the fabrication of plastic based flat panel display module and thus could obtain a highly reliable interconnect with a low contact resistance ( 20-25ω ).
In this report, excimer laser annealed polycrystalline silicon (poly-Si) films on flexible polymer substrates are investigated. The amorphous silicon (a-Si) films were first deposited on polycarbonate (PC) and polyethersulfone (PES) substrates by radio-frequency (RF) magnetron sputter and sequentially annealed by XeCl excimer laser annealing system (λ = 308 nm). The argon concentration of a-Si films which was estimated by Rutherford Backscattering Spectrometry (RBS) was found to be dependent on the dynamic pressure during the deposition process and the sputtering gas. Typically, the argon concentration of a-Si film was 1 ∼ 2% when the film was deposited using argon gas at 6 mTorr. After the annealing process, the average grain size of the poly-Si film annealed with laser energy density of 289 mJ/cm2 was 400 nm estimated from transmission electron microscope (TEM) investigations.
In this study, the quality of thin film diode (TFD) as a switching device for active-matrix liquid-crystal-displays (AM-LCDs) was enhanced by low temperature annealing conditions with high reliability and good electrical properties. Device was composed with Ta as bottom electrode, anodic Ta2O5 as insulator layer and top electrode. Two types of material such as Ti and Cr were evaluated as a top electrode of the TFD device to optimize the symmetry of current-voltage characteristic curve, respectively. The annealing was done at low temperature conditions below 350°C. The low temperature annealing improved the TFD device with nearly perfect symmetry under high electric field.
The stability of organic thin film transistors (OTFTs) has become one of the most vital issues in this area of research. In this report, we investigated the stability of rubber stamp printed OTFTs. The electrical properties such as saturation field effect mobility, threshold voltage and on/off current ratio change significantly in ambient air condition. In order to analyze the degradation of the device, transistors were measured in vacuum, dry N2 and air environment as a function of time. In vacuum and dry N2 atmosphere, saturation field effect mobility and threshold voltage variations are relatively small compared to those measured in ambient condition.
To realize an air stable device, we applied a passivation layer which protects the device from oxygen or water molecules which is believed to be the source of the degradation. With the passivation layer, the threshold voltage shift was reduced suggesting that a proper passivation layer is a prerequisite in organic-based electronics.
The electrical and mechanical properties in indium-tin-oxide films deposited on polymer substrate were examined. The materials of substrates are polyethersulfone(PES), polycarbonate(PC), polyethylene terephthalate(PET) which have gas barrier layer and anti-glare coating for plastic-based devices. The experiments were performed by rf-magnetron sputtering using a special instrument and buffer layers. Therefore, we obtained a very flat polymer substrate deposited ITO film and investigated the effects of buffer layers, in addition to the instrument. Moreover, the influences of an oxygen partial pressure and post-deposition annealing in ITO films deposited on polymer substrates were clarified. X-ray diffraction observation, measurement of electrical property, and optical microscope observation were performed for the investigation of micro-structure and electro-mechanical properties. They indicated that as-deposited ITO thin films are amorphous and become quasi-crystalline after adjustment of oxygen partial pressure and thermal annealing above 180 °C. As the results, we obtained 20-25 Ω/ of ITO films with a good transmittance (above 80%) under 0.2 % oxygen contents and vacuum annealing. Furthermore, using organic buffer layer, we obtained ITO films which have rather high electrical resistance (40-45 Ω/ ) but have improved optical (more than 85%) and mechanical characteristics compared to the counterparts.
We studied the growth of polycrystalline silicon by using remote plasma chemical vapour deposition technique. The effects of RF power and the substrate temperature on the structural properties have been investigated. With increasing the RF power, the crystalline volume fraction and the grain size increase up to 100W, but decrease for the further increase in power level. We obtained the poly-Si with the crystalline volume fraction of about 74 at.% at the substrate temperature of 330°C.
A bistable effects of Au nano-crystals embedded in poly(N-vinylcarbazole) (PVK) were observed. Subsequently we investigated dependency of the nonvolatile memory behavior on curing temperature for the Au nano-crystals embedded in the PVK. For the study, in the devices of different curing temperatures we measured current-voltage characteristics for the devices and investigated the formation of the Au nano-crystals using cross sectional transmission electron microscopy (TEM). The nonvolatile memory behavior depends on the curing temperature, which is attributed to the suitable formation of the Au nano-crystal.
We have studied the improvement of the quality of undoped a-Si:H deposited by remote-plasma chemical vapour deposition. The effects of reactant gas concentration, rf power, substrate bias voltage on the electrical and optical properties have been investigated. Some hydrogen dilution of si lane improves the photoeletric property and a high rf power gives rise to the defect creation due to the ion bombardment on the growing surface. The positive substrate bias improves the quality of undoped a-Si:H.
We have studied the growth of microcrystalline silicon (μc-Si) and amorphous silicon (a-Si:H) by layer by layer deposition technique, where the deposition and the radical exposure are done alternatively. He or hydrogen plasma exposure gives rise to the etching effect of both μc-Si and a-Si:H even though the etch rate by He plasma is much smaller. The long exposure of hydrogen radical on a-Si:H gives rise to the formation of μc-Si at low substrate temperature (Ts), whereas the hydrogen content decreases at high Ts. The growth mechanism of the crystallite is proposed on the basis of experimental results.
We studied the layer by layer deposition technique of a-Si:H film, where the hydrogen radicals are exposed between the deposition of each layer. The effects of each layer thickness and hydrogen radical exposure time on the electrical and optical properties were studied. With the decrease of the each layer thickness, more hydrogen is involved in the network if the structure is still amorphous, but the hydrogen content is very small for microcrystal Si formed by long exposure to hydrogen radicals in between the depositions of thin layers.
We have studied the effect of RF power on the properties of Si thin films prepared by a conventional plasma and remote plasma(RP)- CVD. The structure of the Si film changes from amorphous to crystalline with increasing RF power in RP-CVD. However, the structure of Si film deposited by P-CVD remains amorphous with increasing RF power. The relaxation of Si atoms by means of chemical annealing of He metastable atoms gives rise to the formation of macrocrystalline structure at the high RF powers.
The effects of deposition temperature, rf power and hydrogen dilution ratio on the growth, structure and transport of p-type microcrystal(μc-) Si films deposited by remote plasma CVD have been investigated. While low substrate temperature and low rf power yield small grain sizes, high temperature and high rf power tend to supress the growth of grains. The etching of Si by hydrogen radicals plays an important role to grow μc-Si, but excess etching supresses the growth of crystallites. We obtained 400 A of grain size and 3.5 S/cm of room temperature conductivity for p-type μ-Si.