In order to integrate porous dielectric materials into the next generation of Cu/low-k interconnect, the porous material has to be sealed against metal barrier precursor. We have reported pore sealants which forms ultra-thin (< 3 nm-thick) layer on top of the surface of porous low-k film while the pore sealant does not diffuse into pores. In this study, it was investigated how pore seal layer is formed on the surface of porous material and how pore mouths are sealed by pore seal layer. It was found that 1) thickness of the pore seal layer is well-controlled in the range < 5 nm, by varying spin rate and concentration of solid, 2) minimal thicknesses of the pore seal layer needed to achieve an efficient sealing for porous low-k films whose pore radius is 1.5 nm was 2.6 nm. 3) Larger pores, whose pore radius is 4.2 nm, were sealed completely with an expansion of our technology.

Pore sealing has become a critical issue for the implementation of porous low-k dielectrics and for realizing acceptable reliability performance of the interconnect. This study focuses on fabrication of ultra-thin, conformal and plasma resistant pore seal layer and on understanding parameters playing a role in sealing the surfaces of porous low-k films. It was found that 2.5 nm-thick pore seal layer shows a perfect toluene seal property for the porous low-k film whose pore radius is 1.48 nm. The pore seal layer still show a good toluene seal property after irradiation of He plasma at 250°C for 10 sec. The increments of dielectric constant by applying the pore seal layer and by the He plasma irradiation for 10 sec are 0.04 and 0.03, respectively. Interestingly, all of toluene seal property, refractive index of the bottom part of the film and dielectric constant started to deteriorate after irradiation of He plasma for 20 sec. It was suggested that when toluene seal property degrades, plasma would start diffusing into pores and both refractive index of the bottom part of the film and k value start to increase.