A life-threatening cardiopulmonary resuscitation (CPR)-related injury can cause recurrent arrest after return of circulation. Such injuries are difficult to identify during resuscitation, and their contribution to failed resuscitation can be missed given the limitations of conventional CPR. Extracorporeal cardiopulmonary resuscitation (ECPR), increasingly being considered for selected patients with potentially reversible etiology of arrest, may identify previously occult CPR-related injuries by restoring arterial pressure and flow. Herein, we describe two cases of severe CPR-related injuries contributing to recurrent arrest. Each case had ECPR implemented within 60 minutes of the start of CPR. After the presumed cardiac etiology had been addressed with percutaneous coronary intervention, life-threatening cardiovascular injuries with recurrent arrest were noted, and resuscitative thoracotomy was performed under ECPR. One patient survived to hospital discharge.

ECPR may provide an opportunity to identify and correct severe resuscitation-related injuries causing recurrent arrest. Chest compression depth >6 cm, especially in older women, may contribute to these injuries.

The junction resistance control of conducting networks is a crucial factor for high performance of the network-structured conducting film. Here, we show that silver nanowire (AgNW) networks can be stabilized by using single-walled carbon nanotubes (SWCNTs) which were functionalized with 2-ureido-4[1H]pyrimidinone (UHP) moieties. UHP-modified SWCNTs allowed us to fabricate AgNW suspension containing SWCNTs without adding additional dispersant molecules. The stabilization of AgNW networks was achieved by minimizing the joule heating at the NW-NW junction assisted by in-situ interconnection with the work function modulated SWCNTs. We propose that the electrical transportation pathway was modulated by the SWCNTs through the SWCNT-AgNW junctions, which results in a relatively lower junction resistance than the NW-NW junction in the network film.

The technological development of all kinds of lightweight transportation devices including vehicles, aircraft, ships, etc. has progressed markedly with the demand for energy saving and environmental protection. Aluminum alloy is in the spotlight as it is a suitable environmentally friendly material. However, deformation is a major problem during the welding process because aluminum alloy has a large thermal expansion coefficient. In addition, it is known that its corrosion resistance is excellent; nevertheless, in practice, considerable corrosion is generated and this is a major problem. To solve this problem, the friction stir welding (FSW) technology is applied extensively at various industrial fields as a new welding technique. This method involves a process in which materials are joined by frictional heat and physical force. Therefore, we evaluated improvements in mechanical properties and corrosion resistance through annealing heat treatment after FSW. The electrochemical experiment did not show a significant difference. However, the microstructure observation showed defectless, fine crystal particles, indicating excellent properties at 200–225°C.

Background: The influences of demographics, culture, language, and environmental changes on Mini-Mental State Examination (MMSE) scores are considerable.

Methods: Using a sample of 7452 healthy, community-dwelling elderly Koreans, aged 55 to 94 years, who participated in the four ongoing geriatric cohorts in Korea, we investigated demographic influences on MMSE scores and derived normative data for this population. Geropsychiatrists strictly excluded subjects with cognitive disorders according to the protocol of the Korean version of the Consortium to Establish a Registry for Alzheimer's Disease Assessment Packet (CERAD-K) Clinical Assessment Battery (CERAD-K-C).

Results: Education (standardized β = 0.463), age (standardized β = −0.303), and gender (standardized β = −0.057) had significant effects on MMSE scores (p < 0.001). The score of MMSE increase 0.379 point per 1-year education, decrease 0.188 per 1-year older, and decrease 0.491 in women compared to men. Education explained 30.4% of the scores’ total variance, which was much larger than the variances explained by age (8.4%) or gender (0.3%). Accordingly, we present normative data for the MMSE stratified by education (0, 1–3, 4–6, 7–9, 10–12, and ≥ 13 years), age (60–69, 70–79, and 80–89 years), and gender.

Conclusions: We provide contemporary education-, age-, and gender-stratified norms for the MMSE, derived from a large, community-dwelling elderly Korean population sample, which could be useful in evaluating individual MMSE scores.

We fabricated PMOS SPC-Si TFTs which show better current uniformity than ELA poly-Si TFTs and superior stability compare to a-Si:H TFT on a glass substrate employing alternating magnetic field crystallization. However the leakage current of SPC-Si TFT was rather high for circuit element of AMOLED display due to many grain boundaries which could be electron hole generation centers. We applied off-state bias annealing of VGS=5V, VDS=-20V in order to suppress the leakage current of SPC-Si TFT. When the off-state bias annealing was applied on the SPC-Si TFT, the electron carriers were trapped in the gate insulator by high gate-drain voltage (25V). The trapped electron carriers could reduce the gate-drain field, so that the leakage current of SPC-Si TFT was reduced after off-state bias annealing. . We also applied same off state bias annealing at SPC-Si TFT with 20,000 lx light illumination in order to verify the reduction of leakage current of SPC-Si TFT under light illumination. The leakage current of SPC-Si TFT was reduced successfully even under light illumination during off-state bias annealing. The off-state bias annealed SPC-Si TFT could be used as pixel element of high quality AMOLED display.

Anthropogenic land use within watersheds has substantial effects on aquatic habitats and biological communities. From September 2006 to December 2008, we investigated the effects of land use on benthic macroinvertebrate communities by comparing Song Stream and Odae Stream, two adjacent mountain streams in Korea whose watersheds have different land use patterns. Song Stream is significantly disturbed by agricultural activities in the watershed, whereas Odae Stream is relatively undisturbed and is surrounded by a well-conserved forest area. Song Stream had significantly higher levels of all nutrients and sediment-related factors due to the adjacent agricultural area. As a result, Song Stream had markedly lower species community indices, such as taxa richness and abundance. In Song Stream, macroinvertebrate scrapers and predators were most adversely affected, whereas collector-gatherers became a dominant group. Based on correlation and multivariate analyses, total dissolved solids had the strongest negative relationship with macroinvertebrate assemblages, followed by electrical conductivity, total nitrogen, and pH. The proportion of cobble in stream substrate was positively related to the richness and abundance of macroinvertebrates. Our results indicate that disturbances caused by agricultural land use, particularly sand deposition, had significant adverse effects on macroinvertebrate habitats and on the biotic integrity of benthic macroinvertebrate communities.

We have propsed MgO/AZO bi-layer transparent conducting oxide (TCO) for thin film solar cells. From XRD analysis, it was observed that the full width at half maximum of AZO decreased when it was grown on MgO precursor. The Hall mobility of MgO/AZO bi-layer was 17.5cm2/Vs, whereas that of AZO was 20.8cm2/Vs. These indicated that the crystallinity of AZO decreased by employing MgO precursor. However, the haze (=total diffusive transmittance/total transmittance) characteristics of highly crystalline AZO was significantly improved by MgO precursor. The average haze in the visible region increased from 14.3 to 48.2%, and that in the NIR region increased from 6.3 to 18.9%. The reflectance of microcrystalline silicon solar cell was decreased and external quantum efficiency was significantly improved by applying MgO/AZO bi-layer TCO. The efficiency of microcrystalline silicon solar cell with MgO/AZO bi-layer front TCO was 6.66%, whereas the efficiency of one with AZO single TCO was 5.19%.

The electrical properties of Ni-based ohmic contacts N-face p-type GaN are presented. The specific contact resistance of N-face p-GaN exhibits a liner decrease from 1.01 × cm2 to 9.05 × 10-3 Ω cm2 for the as-deposited and the annealed Ni/Au contacts, respectively, with increasing annealing temperature Furthermore, the specific contact resistance could be decreased by four orders of magnitude to 1.03 × 10-4 Ω cm2 as a result of surface treatment using an alcohol-based (NH4)2S solution. The depth profile data measured by the intensity of O1s core peak in the x-ray photoemission spectra showed that the alcohol-based (NH4)2S treatment was effective in removing of the surface oxide layer of GaN. In addition, a Ga 2p core-level peak showed a red-shift of binding energy by 0.3 eV by alcohol-based (NH4)2S treatment, indicating that the surface Fermi level was shifted toward the valence-band edge. Thus, the low ohmic contact behavior observed in our treated sample might be explained in terms of the removal of the oxide layer and reducing the barrier heights by reduced band-bending effect.

We have fabricated the nano-floating gate memory with the TiSi2 and WSi2 nanocrystals embedded in the dielectrics. The TiSi2 and WSi2 nanocrystals were created by using sputtering and rapidly thermal annealing system, and then their morphologies were investigated by transmission electron microscopy. These nanocrystals have a spherical shape with an average diameter of 2-5 nm. The electrical properties of the nano-floating gate memory with TiSi2 and WSi2 nanocrystals were characterized by capacitance-voltage (C-V) hysteresis curve, memory speed and retention. The flat-band voltage shifts of the TiSi2 and WSi2 nanocrystals capacitors obtained appeared up to 4.23 V and 4.37 V, respectively. Their flat-band voltage shifts were maintained up to 1.6 V and 1 V after 1 hr.

The kinetic study of the nitrogen dissolution was investigated. An isotope exchange technique is employed as a method for measuring the rate of nitrogen dissolution into the molten steel and the effects of O, S, C, Mn, and B addition on surface reaction have been considered at 1873 K.

Recently, non-volatile polymer memories have been researched as a next generation of non-volatile memory because of its simple structure and easy fabrication process. We found that two types of non-volatile polymer memory have different I-V behavior. First Polymer non-volatile memory with metal / oxide / polymer / metal structure But Polymer non-volatile memory embedded Au Nano-crystal shows different I-V behavior. Polymer non-volatile memory shows NDR(Negative Differential Resistance) Region after threshold voltage and low to high current path at increasing positive and negative bias. We can observe NDR(Negative Differential Resistance) Region on Polymer non-volatile memory embedded Au Nano crystal. We fabricated devices three different type to confirm difference Polymer non-volatile memory with metal / polymer / metal structure, metal / oxide / polymer / metal structure and Au nano-crystal embedded Polymer non-volatile memory. First we fabricated Polymer non-volatile memory with metal / PVK(Poly-n-vinyl carbarzole) / metal structure. first type of device shows ohmic I-V behavior. Second type of polymer non-volatile memory has oxide layer between metal and polymer layer. Oxide layer made by O2 plasma treatment(100W RF power, 100SCCM O2 gas flow) after metal layer deposited. Second type of device has same structure as first device except oxide layer. Second type of device shows I-V behavior similar to Resistive Memory. Resistive non-volatile memory shows low to high current path at increasing positive bias and high to low current path at increasing negative bias. I-V behaviors of second device due to effect of oxide layer between metal and polymer layer. Third type of polymer non-volatile memory we embed Au nano-crystal layer in polymer layer. Au nano-crystal layer embedded by curing process. We deposit 5nm Au layer after spin coated PVK(Poly-n-vinyl carbarzole) layer and curing at 300¡É. We can observe NDR(Negative Differential Resistance) Region and different I-V behaviors with other type of device. Finally we fabricated polymer non-volatile memory embedded au nano-crystal by dispersion method to confirm effect of au nano-crystal. We report difference I-V behaviors polymer non-volatile memory with metal / polymer / metal structure and polymer non-volatile memory embedded au nano-crystals

Many researchers have investigated organic nonvolatile memory devices as one of candidates device for next generation nonvolatile memory because of their low-cost, flexible and simple fabrication. The memory phenomenon in these devices is based on the electrical bistability of the material, which has two resistance states. We report memory effect in organic molecules based on electrical bistability of the materials and the bistable phenomenon was observed in poly(N-vinylcarbazole) (PVK) layer, containing a high density of Au nanocrystals and sandwiched between Al electrodes. The device was fabricated on cleaned SiO2. First, Al for the bottom electrode was deposited on SiO2 substrate by thermal evaporation in a vacuum chamber (pressure ∼10−6 torr). The PVK was dissolved with chloroform, spin-coated on the Al electrode, and baked at 120¡ÆC for 2 min to evaporate the solvent away. Subsequently, a 5-nm-thick Au film was deposited on the PVK. Additional PVK was then spin-coated on the Au film and baked. Next, the device was cured at 300¡É for 2 h in air to produce the Au nano-crystals. This device showed good nonvolatile memory characteristics. It was confirmed that it shows several region of current levels, (ION, IOFF, IINTER). When the voltage increased from zero in the OFF state (low conductivity state), the current increased rapidly at the threshold voltage (Vth), and presented a regime of negative differential resistance (NDR) after writing. Moreover ON and OFF states could be set at voltages at Vprogram (or Vp) and Verase (or Ve), respectively, and could be read at 1 V. After the device was programmed by sweeping the voltage from 0 to Vp, the current followed the high conductivity state and stayed in the ON state. And the device was programmed by sweeping the voltage from 0 to Ve, the current followed the low conductivity state and stayed in the OFF state. Furthermore, they exhibited seven different reversible current paths (intermediate states) capable for approving electron charge or discharge on surface of Au nanocrystals by sweeping the voltage from 0 to VNDR. Our results demonstrate that the fundamental parameters of the device were stable; the values of Vth, Vp, and Ve were ∼2.8, ∼4, and ∼8 V, respectively. In particular, this device exhibited excellent nonvolatile memory behavior, with bistability (ION/IOFF) of >1×102 and an intermediate state for multi-bit operation. We suggest that the current conduction mechanism clearly follow space-charge-limited(SCLC) for low conductivity state, thermionic field emission for electron charge(writing) or discharge(erasing), and F-N tunneling after erasing.