The paper presents complex research of the structure and electrophysical properties of thin films on the basis of Cr2O3, V2O5 and SiO2 oxides compounds. The paper studies binary compounds films of Cr2O3 -V2O5 and Cr2O3 - V2O5 -SiO2 films. The method of electron-beam evaporation is used for the films deposition; glass is used as the substrate. The films structure is studied by the methods of slow electron diffraction, infrared spectroscopy, and electron paramagnetic resonance. The films composition is determined by the X-ray microanalysis.
In the course of studies the following regularities have been established:
- dependence of the films structure on their composition;
- dependence of electrophysical films properties on the their composition;
- dependence of volt-ampere characteristics on the films composition (memory effect);
- high film stability to the effect of electron flow and radiation in the discharge plasma.