This paper is the second report since 1984 on the photometric monitoring of long-period eclipsing binary stars at Yonsei University Observatory using a 61-cm reflector.

In interpreting radiocarbon dating results, it is important that archaeologists distinguish uncertainties derived from random errors and those from systematic errors, because the two must be dealt with in different ways. One of the problems that archaeologists face in practice, however, is that when receiving dating results from laboratories, they are rarely able to critically assess whether differences between multiple 14C dates of materials are caused by random or systematic errors. In this study, blind tests were carried out to check four possible sources of errors in dating results: repeatability of results generated under identical field and laboratory conditions, differences in results generated from the same sample given to the same laboratory submitted at different times, interlaboratory differences of results generated from the same sample, and differences in the results generated between inner and outer rings of wood. Five charred wood samples, collected from the Namgye settlement and Hongreyonbong fortress, South Korea, were divided into 80 subsamples and submitted to five internationally recognized 14C laboratories on a blind basis twice within a 2-month interval. The results are generally in good statistical accordance and present acceptable errors at an archaeological scale. However, one laboratory showed a statistically significant variance in ages between batches for all samples and sites. Calculation of the Bayesian partial posterior predictive p value and chi-squared tests rejected the null hypothesis that the errors randomly occurred, although the source of the error is not specifically known. Our experiment suggests that it is necessary for users of 14C dating to establish an organized strategy for dating sites before submitting samples to laboratories in order to avoid possible systematic errors.

We report on the formation of highly flexible and transparent TiO2/Ag/ITO multilayer films deposited on polyethylene terephthalate substrates. The optical and electrical properties of the multilayer films were investigated as a function of oxide thickness. The transmission window gradually shifted toward lower energies with increasing oxide thickness. The TiO2 (40 nm)/Ag (18 nm)/ITO (40 nm) films gave the transmittance of 93.1% at 560 nm. The relationship between transmittance and oxide thickness was simulated using the scattering matrix method to understand high transmittance. As the oxide thickness increased from 20 to 50 nm, the carrier concentration gradually decreased from 1.08 × 1022 to 6.66 × 1021 cm−3, while the sheet resistance varied from 5.8 to 6.1 Ω/sq. Haacke's figure of merit reached a maximum at 40 nm and then decreased with increasing oxide thickness. The change in resistance for the 60 nm-thick ITO single film rapidly increased with increasing bending cycles, while that of the TiO2/Ag/ITO (40 nm/18 nm/40 nm) film remained virtually unchanged during the bending test.

Uremia is a syndrome of clinical and metabolic abnormalities, which develops in parallel with the deterioration of renal function. Uremic encephalopathy is one of many manifestations of acute or chronic renal failure. It is usually applied to patients with cortical involvement, such as confusion, seizure, tremor, myoclonus, or asterixis. Some cases of acute extrapyramidal movement disorders associated with bilateral basal ganglia lesions, especially parkinsonism have been reported in uremic patients. Here, we report a diabetic uremic patient who developed acute chorea associated with bilateral basal ganglia lesions.

Thin-film transistors (TFTs) utilizing a TiZnSnO (TZTO) channel layer were fabricated by using a solution process. The effect of annealing temperature on the device performance of the TZTO TFTs was investigated. TFTs with nanocrystalline TZTO films exhibited a better device performance than those with amorphous TZTO films. The on/off current ratio of the TZTO TFTs annealed at 600 °C was as large as 4.2 × 106. The field-effect mobility (μFE) of 4.1 cm2/Vs and subthreshold swing of 1.2 V/decade were achieved.

When a drop is deposited on a superhydrophilic micropillar array, the upper part of the drop (referred to as the bulk) collapses while the bottom part penetrates into the gaps of the array, forming a fringe film. Here we quantify the early stage dynamics of this process using a combination of experiment and theory. We show that the circular front of the fringe film spreads like t1/2, t being time, when coupled to the bulk flow. However, the film is found to advance like t1/3 through faceted zippering in the absence of the bulk. We then show that the spreading of the bulk and the entire drop footprint follows a power law (t1/4) that is different from Washburn's law. This work can be a starting point to completely understand the spreading of liquids on superhydrophilic surfaces and opens questions specific to superwetting behaviour including the criteria to determine whether the fringe film will expand through lateral zipping or advance radially outwards.

The globular cluster system in M31 is an ideal laboratory for studying the formation and evolution of M31 as well as the globular clusters themselves. There have been numerous surveys and studies of the globular clusters in M31. However, only recently has the entire body of M31 been searched for globular clusters using wide-field CCD images by our group. A new era for the M31 globular cluster system has begun with the advent of wide-field CCD surveys of M31. We have discovered more than 100 new globular clusters in M31. Our catalog currently includes more than 500 globular clusters confirmed either based on spectra or HST images, many more than in the Milky Way. We present the structure, kinematics and chemical abundance of the M31 globular cluster system based on this large sample, and the implications for the formation and evolution of M31.

We investigated the catheterization and angiographic findings of 26 patients with Williams‘ syndrome to evaluate the natural course of supravalvar aortic stenosis and peripheral pulmonary arterial stenosis. The severity of the stenosis was correlated with age and body surface area in terms of the pulmonary arterial index, right ventricular systolic pressure, sinutubular ratio(ratio of measured to mean normal diameter of sinutubular junction), and systolic pressure gradient across the sinutubular junction. In patients with pulmonary arterial stenosis (n=20), right ventricular systolic pressure tended to decrease, and pulmonary arterial index increased, with increase in age and body surface area. Between the groups with and without pulmonary arterial stenosis, there was significant difference in age (mean 4.70 vs. 9.87, p = 0.019), body surface area (0.62 vs. 1.16, p = 0.002), pulmonary arterial index (152 vs. 317, p=0.002) and right ventricular systolic pressure (73.9 vs. 33.0, p=0.006). As all patients showed similar diameters at the sinutubular junction regardless of age and body size, sinutubular ratio decreased with increases in age and body surface area. The group with abnormal coronary arteries (n = 7) had smaller sinutubular ratio (0.46 vs. 0.61, p=0.021) and higher pressure gradients between the left ventricle and the aorta (67.6 vs. 42.2, p=0.023) than did the group with normal coronary arteries. Stenosis of a coronary artery, or a branch of the aortic arch, was observed only in three patients with diffuse aortic stenosis.

Our results suggest that, with time, peripheral pulmonary arterial stenosis tends to improve, and supravalvar aortic stenosis to progress. Failure of growth of the sinutubular junction might be responsible for the progression of the aortic lesion. Progression of the aortic lesion may be associated with involvement of the coronary arteries.

A mucin coat is deposited on rabbit embryos during passage through the oviduct; rabbit blastocysts cultured from the 1-cell stage in vitro have no mucin coat. When cultured blastocysts are transferred to recipients, the lack of mucin coat might account in part for subsequent failure of pregnancy. We have investigated the possibility that mucin coat deposition is induced following transfer of in vitro 72 h-cultured blastocysts to oviducts of asynchronous or synchronous recipients. One-cell embryos were collected by flushing oviducts 19–20 h post-coitus and were cultured in vitro for 72 h until they reached the blastocyst stage. The blastocysts were transferred to the oviducts of recipients that were synchronized either with the donors (synchronous) or 1 day later than the donors (asynchronous). They were recovered after 24–48 h and the mucin coat thickness and embryo degeneration rate were measured. The degeneration rate of blastocysts recovered from uteri of synchronous recipients was higher than that from asynchronous recipients (72.2% vs 40.0%). The mucin coats around embryos recovered from oviducts of asynchronous recipients after 48 h were thicker than those from synchronous recipients. More asynchronous recipients were pregnant and gave birth to more pups than synchronous recipients. These results indicate that the oviducts of asynchronous recipients secreted more mucin around the transferred embryos, causing higher rates of implantation of the in vitro-cultured blastocysts.

Pt thin films of various thicknesses (30 nm ∼ 200 nm) were deposited on Si wafers with SiO2, Ti, TiO2, or IrO2 buffer layers at various temperatures (room temperature ∼200 °C) by a direct current magnetron sputtering process. The Pt films showed a strong (111)-preferred texture irrespective of the thickness, under-layer, and growth temperature. The authors previously reported [J-E. Lim, D-Y. Park, J.K. Jeong, G. Darlinski, H.J. Kim, and C.S. Hwang, Appl. Phys. Lett. 81, 3224 (2002)] that the films were composed of three kinds of grains with slightly different (111) lattice parameters (bulklike, 1.0% and 2.1% larger). This study details the microstructural variations of the Pt films according to the variations of experimental parameters. The different deposition conditions produced slightly different crystalline structures, but the three different (111) lattice parameters were always found. Epitaxial (200) Pt films on a (200) MgO substrate and a highly (111) textured Au thin film on a SiO2/Si did not show the same splitting in the lattice parameter. The grains with 1.0% and 2.1% larger (111) lattice parameter almost disappeared after postannealing at 1000 °C. However, surface chemical binding of the Pt film before and after annealing was unchanged. Therefore, it is believed that the lattice parameter splitting in the (111) textured Pt film originated from the interfacial grains with the distorted crystal structure due probably to growth stress.

A significant degradation of current gain of InP/InGaAs/InP double heterojunction bipolar transistors was observed after passivation. The amount of degradation depended on the degree of surface exposure of the p-type InGaAs base layer according to the epi-structure and device structure. The deposition conditions such as deposition temperature, kinds of materials (silicon oxide, silicon nitride and aluminum oxide) and film thickness were not major variables to affect the device performance. The gain reduction was prevented by the BOE treatment before the passivation. A possible explanation of this behavior is that unstable non-stoichiometric surface states produced by excess In, Ga, or As after mesa etching are eliminated by BOE treatment and reduce the surface recombination sites.

The factors affecting optical gain were studied for Er-doped BaTiO3 thin film waveguides. Er-doped BaTiO3 with dopant concentrations of 0.3 – 9 at.% was deposited by metal-organic chemical vapor deposition. The luminescence efficiency was maximized by optimizing the growth temperature and erbium concentration as well as by post-deposition annealing. Stimulated emission was studied using the pump-probe technique over the spectral range of 1,520-1,550 nm. A maximum differential gain of 3 dB/cm was measured at 1,540 nm in an 8 mm long, 8 μm wide ridge waveguide.

The mechanical properties of silicon crystals are important from the viewpoint of wafer and device fabrication processes. It is now widely recognized that silicon undergoes a series of phase transformations when subjected to high pressures, using conventional high pressure devices, such as diamond anvils or hydrostatic pressure cells, or under indentation. Scratching on a silicon surface in the various conditions introduces various kinds of mechanical damage and stressed states. Micro-Raman spectroscopy was used to observe the phase transition of single crystal silicon. Several different phases were observed depending on scratching speed and scratched locations.

The factors affecting optical gain were studied for Er-doped BaTiO3 thin film waveguides. Er-doped BaTiO3 with dopant concentrations of 0.3 – 9 at.% was deposited by metal-organic chemical vapor deposition. The luminescence efficiency was maximized by optimizing the growth temperatureand erbium concentration as well as by post-deposition annealing. Stimulated emission was studied using the pump-probe technique over the spectral range of 1,520-1,550 nm. A maximum differential gain of 3 dB/cm wasmeasured at 1,540 nm in an 8 mm long, 8 μm wide ridge waveguide.

The thermal activation energies for conduction of Nb-doped SrTiO3 grains and grain boundaries have been investigated by impedance spectroscopy. First, to observe the effect of electrode/SrTiO3 bulk interface, the varied impedances of SrTiO3 single crystal were measured with temperatures. The activation energy of an electrode/bulk interface was determined to be 1.3 eV, whereas that of bulk was 0.8 eV. When the impedances of Nb-doped SrTiO3 ceramics were measured, it was suggested that the more precise impedance values of a single grain and a single grain to grain junction be obtained using a microelectrode method. The activation energies for a grain, a grain boundary, and an electrode/bulk interface were determined to be about 0.8, 1.3, and 1.5 eV, respectively. From these measured results, it was suggested that the activation energy, 0.8 eV, measured in grain was originated from oxygen vacancies and the activation energy, 1.3 eV, in grain boundary was from strontium vacancies.