A new fabrication technique for quantum dots is proposed on the basis of theoretical studies. It is known that the self-limiting phenomena of silicon oxidation are governed by the large stress induced by the volume expansion. We estimated the change in the band parameter of the silicon under the stress induced by the oxidation. The results show that the band-gap of the silicon considerably decreases under two-dimensional compressive strain. Accordingly, introducing strain to a small part of a Si wire results in the formation of a “strain-induced effective quantum dot”. Moreover, we also propose theoretically a new procedure for fabricating a silicon single electron transistor by the combination of silicon oxidation and nitridation techniques.