The growth and properties of thin films of InN on a variety of substrates nucleated by a 400Å layer of AIN have been shown to be dependent on the lattice mismatch (LMM) with the substrate. Examples are drawn from growth of InN thin films by reactive magnetron sputtering on high symmetry faces of a variety of crystalline substrates [(00.1) sapphire, (111) silicon and (111) yttria-stabilized zirconia, and (001) mica] and amorphous fused quartz. Striking is a comparison of the electrical transport properties for nucleated and unnucleated InN films. For example, the ratio of the Hall mobilities for nucleated and unnucleated InN films deposited on (00.1) sapphire (LMM for AIN and InN of 13.0% and 29.0%, respectively) is ∼102, while this ratio for nucleated and unnucleated InN films on (111) zirconia (LMM for AIN and InN of −14.8% and −7.8%, respectively) is ∼10−2. While all the factors underlying these results are not necessarily obvious, it is rather apparent that this trend in Hall mobility stems from a contrasting trend in film resistivity at a more nearly constant value for the carrier concentration.