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Photocurrent mechanism in a hybrid system of 1-thioglycerol and HgTe quantum dots(QDs) was studied for the first time in the intra-red (IR) range. 1-thioglycerol-capped HgTe QDs were prepared using colloidal method in aqueous solution; the synthesis and size of the HgTe QDs were examined by x-ray diffraction, Raman scattering, and high-resolution transmission electron microscopy. Absorption and photoluminescence spectra of the capped HgTe QDs revealed the strong excitonic peaks in the range from 900 to 1100nm, because of their widened band gap due to the shrinkage of their sizes to about 3 nm. The wavelength dependence of the photocurrent for the hybred system of the 1-thioglycerol and HgTe QDs was very close to that of the absorption spectrum, indicating that charge carriers photoexcited in the HgTe QDs give direct contribution to the photocurrent in the medium of 1-thioglycerol. In this hybrid system, the photo-excited electrons in the HgTe QDs are strongly confined, but the photo-excited holes act as free carriers. Hence, in the photocurrent mechanism of the this hybrid system, only holes among electron-hole pairs created by incident photons in the HgTe QDs are transferred to 1-thioglycerol surrounding HgTe QDs and contribute photocurrent flowing in the medium of 1-thioglycerol.
Bulk-quantity single crystalline wurtzite gallium nitride nanowires with a mean diameter of 25 nm were synthesized on silicon substrate using a catalyst-assisted reaction of gallium and gallium nitride mixture with ammonia. They exhibit a strong and broad photoluminescence in the energy range of 2.9-3.6 eV with no yellow band. X-ray diffraction and Raman scattering data suggest that the nanowires would experience biaxial compressive stresses in the inward radial direction and the induced tensile uniaxial stresses in the wire axis. The blue photoluminescence would originate from the recombination of the bound excitons under the compressive and tensile stresses.
Abstract:GaN thin films on sapphire were grown by RF magnetron sputtering with ZnO buffer layer. The tremendous mismatch between the lattices of GaN and sapphire can be partly overcome by the use of thin buffer layer of ZnO. The dependence of GaN film quality on ZnO buffer layer was investigated by X-ray diffraction(XRD). The properties of the sputtered GaN are strongly dependent on ZnO buffer layer thickness. The optimum thickness of ZnO buffer layer is around 30nm. Using XRD analysis, we have found the optimal substrate temperature which can grow high quality GaN thin film. In addition, the effect of excimer laser annealing(ELA) on structural and electrical properties of GaN thin films was investigated. The surface roughness and images according to the laser energy density were investigated by atomic force microscopy(AFM) and it was confirmed that the crystallization was improved by increasing laser energy density.
We present the results of an investigation of the dependence of the photoluminescence (PL) spectra on preparation conditions, the resulting microstructure, and post-anodization treatment of porous silicon carbide films which were formed from both p and n-type 6H-SiC substrates. Porous samples were prepared by anodic dissolution under different galvanostatic conditions, resulting in different porosities and crystallite sizes. Selected-area electron diffraction patterns taken on similarly prepared porous silicon carbide (PSC) samples confirmed that the films were monocrystalline. Transmission electron microscopy of as-anodized films revealed an isotropie porous network; a dependence of porosity and nanocrystallite size on porous layer formation current density was established. Some PSC samples were passivated using a short, thermal oxidation treatment. The effects of porosity and crystallite size, and of oxide passivation in these PSC films, on PL spectra and intensity were studied using a 365 nm Kr-ion laser as excitation. Under certain conditions, the spectrally integrated PL intensity of a passivated film is more than 450x that for the original bulk SiC substrate. PL spectra are presented, and possible mechanisms are discussed.
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