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The YSTAR program is a general sky survey looking for variability. The main equipments are three 0.5-m telescopes. These telescopes have fast F/2 optics covering nearly 3.5 square degree field onto a 2K CCD. They also have very fast slew capability, which exceeds 10 degrees per second. These two factors make them most suitable for rapid target acquisition and wide-field surveys of various kinds. Our primary objective is to identify and monitor variable stars down to 18th R-magnitude, and our observing mode allows the same data set to be also useful in identifying asteroids. Our first telescope has just begun regular automated operation, and the second telescope will be installed in South Africa within this year to provide coverage of the southern sky.
Well oriented Bi2Sr2CaCu2O8(Bi2212) superconductor thick films were formed successfully on Cu tapes by liquid reaction between Cu-free precursors and Cu tapes. Cu-free Bi-Sr-Ca-O powder mixtures were screen-printed on Cu tapes and heat-treated at 850-870°C for several minutes in air. Cu-free precursors were composed of BixSrCaOy(x= 1.2-2). In order to obtain the optimum heat-treatment condition, we studied on effects of the precursor composition, heattreatment temperature and time, the screen-printing thickness, and the heat-treatment atmosphere on the superconducting properties of Bi2212 films. Microstructures and phases of films were analyzed by XRD and optical microscopy. The electric properties of superconducting films were examined by the four probe method. At heat-treatment temperature, the specimens were in a partially molten state by liquid reaction between CuO in the oxidized copper tape and the precursors. The non-superconducting phases in the molten state are mixtures of Bi-free phase and Cu-free phases.
We have investigated a new method by which selective high doping concentration of GaN can be obtained using XeCl excimer laser and presented low ohmic contact resistance fabricated by the proposed method. We have irradiated silicon film deposited by sputtering on GaN using XeCl excimer laser and formed ohmic contact on the region irradiated by laser. Ohmic contact resistance by laser doping process was effectively reduced to 0.27 ohm-mm while 0.66 ohm-mm was measured in ohmic contact by conventional method. We have verified that silicon is diffused into GaN by high laser energy during laser irradiation through SIMS analysis and ohmic contact resistance is reduced due to increase of doping concentration under ohmic contact region.
We propose a pre-electrical bias aging to reduce threshold voltage (Vth) shift of hydrogenated- amorphous silicon thin-film transistor (a-Si:H TFT) for AMOLED display. The quantity of Vth shift in the sample subjected to a bias-aging is reduced due to the reduction of created dangling bond density, compared with a sample without a bias-aging. When an identical stress duration of 50,000 sec is applied to a-Si:H TFT with or without a pre-electrical bias-aging, the created dangling bond density (ΔNDB) after a pre-electrical bias-aging is decreased from 1.38 × 1011/cm2 to 0.685 × 1011/cm2. Our experimental results indicate that after the pre-electrical bias aging, a newly created dangling bond during an electrical stress is decreased because a weak bond density and hydrogen diffusion may be decreased.
We report the discovery of three new star clusters in the halo of the Local Group dwarf irregular galaxy NGC 6822. These clusters were found in the deep images taken with the MegaPrime at the CFHT covering a total field of 2 deg $\times$ 2 deg. The most remote cluster is found to be located as far as 79 arcmin away from the center of NGC 6822. This distance is several times larger than the size of the region in NGC 6822 where star clusters were previously found. Morphological structures of the clusters and color-magnitude diagrams of the resolved stars in the clusters show that at least two of these clusters are proabably old globular clusters.
It is controversial whether Borna disease virus (BDV) infects humans and causes psychiatric disorders.
The relationship between BDV infection and schizophrenia with deficit syndrome was investigated.
Using the Schedule for the Deficit Syndrome, 62 schizophrenic in-patients were selected from three psychiatric hospitals. RNA was extracted from peripheral blood mononuclear cells and analyzed using nested reverse transcriptase-polymerase chain reaction with primers to detect BDV p24 and p40.
Results and conclusions:
BDV transcripts were not detected in samples from any of the 62 schizophrenic patients. These data do not support an etiologic association between BDV infection and the deficit form of schizophrenia.
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