There have been many reports on the low temperature crystallization of amorphous silicon films by introducing a trace amount of metal impurity for low temperature poly-Si TFTs applications. MIC (Metal Induced Crystallization) uses various metals, to lower crystallization temperature. In this study, a new crystallization method called FALC (Field Aided Lateral Crystallization) in which an electric field is applied during the crystallization was explored. Among possible alloying elements with Si, Ni and Al were selected to compare the effects of these impurities on the FALC.
A trace of Ni lowered the crystallization temperature of a-Si down to 5001C and induced lateral crystal growth along the electric field into the metal free region. But Al exhibited no such effect. A new crystallization method, FALC, showed considerably enhanced speed of lateral crystallization and a strong preferred orientation in crystallized Si-films.