We have investigated the effect of oxygen pressure during growth (P
O2) on the electronic and magnetic properties of PrAlO3 films grown on TiO2-terminated SrTiO3 substrates. The films are smooth, with flat terraces. Resistivity measurements show an increase in the sheet resistance as P
O2 is increased from 10–3 to 10–4 torr, with an usual peak as a function of temperature for the sample grown in higher oxygen pressure. We measured a moderate positive magnetoresistance (MR) at low magnetic fields that evolves into a larger negative MR at high fields, for both P
O2 samples. Hall effect data exhibit a complex temperature dependence that suggests a compensated carrier density. We observe behavior consistent with two different types of carriers at each of the two different interfaces.