An alternative three-dimensional (3D) Monte Carlo (MC) dynamic simulation model for phosphorus implant into (100) single-crystal silicon has been developed which incorporates the effects of channeling and damage. This model calculates the trajectories of both implanted ions and recoiled silicons and concurrently and explicitly affects both ions and recoils due to the presence of accumulative damage. In addition, the model for room-temperature implant accounts for the self-annealing effect using our defined recombination probabilities for vacancies and interstitials saved on the unit volumes. Our model has been verified by the comparison with the previously published SIMS data over commonly used energy range between 10 and 180 keV, using our proposed empirical electronic energy loss model. The 3D formations of the amorphous region and the ultra-shallow junction around the implanted region could be predicted by using our model, TRICSI (TRansport Ions into Crystal-Silicon).