Dual ion implantations of Ti+ and C+ into sintered a-SiC and hot pressed SÌ3N4 have been studied by Rutherford backscattering spectroscopy (RBS) combined with plan/cross section view transmission electron microscopy (TEM). The samples were analyzed before and after annealing at 1200°C for 2 hours in a vacuum of 1x10-6 torr. The results were compared with single ion implantation of Ti+. RBS analysis showed that no oxidation occurred during annealing and Ti diffused toward the surface in both SiC and SigN^ Cross section TEM analysis revealed the formation of TiC precipitates in SiC due to both dual (Ti+ + C+) and single (Ti+) ion implantations. Precipitates were found to form in SÌ3N4 as well; however, because of very close proximity of observed d values with those of TiC, TiN and β-SiC, it was not possible to uniquely identify the chemical nature of these precipitates. Thermo-dynamic calculations were performed to explain the observed results.