14 results
Spatially Resolved Characterization of Microstructure, Defects and Tilts in GaN Layers Grown on Si(111) Substrates by Maskless Cantilever Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 934 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0934-I09-06
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- 2006
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Characterization of Stress Relaxation, Dislocations and Crystallographic Tilt Via X-ray Microdiffraction in GaN (0001) Layers Grown by Maskless Pendeo-Epitaxy
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- MRS Online Proceedings Library Archive / Volume 875 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, O4.9
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- 2005
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Micro-photoluminescence studies of excitonic and multiexcitonic states of quantum dot-like localization centers in InGaN/GaN structures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E5.3
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- 2004
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Microstructural Evaluation of Compositional Fluctuations in AlGaN Grown on 6H-Sic Substrates
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- Journal:
- Microscopy and Microanalysis / Volume 9 / Issue S03 / September 2003
- Published online by Cambridge University Press:
- 05 September 2003, pp. 256-257
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- September 2003
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Study of the Origin of Misorientation in GaN Grown by Pendeo-Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L3.17
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- 2002
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Compositional Fluctuations in AlxGa1-xN Layers grown on 6H-SiC (0001) by Metal Organic Vapor Phase Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L3.51
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- 2002
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Influence of Doping on the Lattice Dynamics of Gallium Nitride
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 327-332
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- 1999
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Studies on Carbon as Alternative P-Type Dopant for Gallium Nitride
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 526-531
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- 1999
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Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 263-268
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- 1999
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Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G3.33
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- 1998
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Influence of Doping on the Lattice Dynamics of Gallium Nitride
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G3.57
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- 1998
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Studies on Carbon as Alternative P-Type Dopant for Gallium Nitride
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G5.6
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- 1998
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Deep Trap Characterization In GaN Using Thermal And Optical Admittance Spectroscopy
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- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 887
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- 1997
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MBE Growth of GaN on NdGaO3 (101)
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- Journal:
- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 295
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- 1997
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