The Ion and vapour deposition method (IVD method) has been used for the first time to form silicon nitride films. Silicon nitride formation using IVD method, which consists of a nitrogen ion implantation and a simultaneous electron beam evaporation of silicon, has been confirmed.
These silicon nitride films formed by IVD method have been characterized using FTIR, ellipsometry and AES analyses. It has been observed that these IVD silicon nitride films characteristics are sensitive to the nitrogen ion implantation conditions and the silicon evaporation rate.
Applications of these IVD films to selective oxidation have exhibited a good resistance to oxidation. It has also permitted the bird's beak to be reduced.