Use of aluminum alloyed zinc oxide (AZO) as a transparent contact to p-GaN has received significant attention for GaN/InGaN light emitting diodes applications. Reports show that AZO as deposited on p-GaN forms a Schottky contact given the large work-function difference between AZO and p-GaN . However, utilization of a thin nickel layer inserted between the AZO and p-GaN can result in an ohmic contact , given that Ni forms an ohmic contact to p-GaN upon annealing. Here, we undertake simulation studies of this AZO/Ni interface as a function of Nickel layer. Simulation studies of the transport mechanism in this contact indicate the likelihood of a tunneling junction at the AZO/Ni interface, thus the entire AZO/Ni forming an ohmic contact to p-GaN. Potential to better control injected current density uniformity utilizing such a contact structure is also discussed.