Tight focusing with very small f-numbers is necessary to achieve the highest at-focus irradiances. However, tight focusing imposes strong demands on precise target positioning in-focus to achieve the highest on-target irradiance. We describe several near-infrared, visible, ultraviolet and soft and hard X-ray diagnostics employed in a ∼1022 W/cm2 laser–plasma experiment. We used nearly 10 J total energy femtosecond laser pulses focused into an approximately 1.3-μm focal spot on 5–20 μm thick stainless-steel targets. We discuss the applicability of these diagnostics to determine the best in-focus target position with approximately 5 μm accuracy (i.e., around half of the short Rayleigh length) and show that several diagnostics (in particular, 3$\omega$ reflection and on-axis hard X-rays) can ensure this accuracy. We demonstrated target positioning within several micrometers from the focus, ensuring over 80% of the ideal peak laser intensity on-target. Our approach is relatively fast (it requires 10–20 laser shots) and does not rely on the coincidence of low-power and high-power focal planes.

We report on the design and characterization of the plasma mirror system installed on the J-KAREN-P laser at the Kansai Photon Science Institute, National Institutes for Quantum Science and Technology. The reflectivity of the single plasma mirror system exceeded 80%. In addition, the temporal contrast was improved by two orders of magnitude at 1 ps before the main pulse. Furthermore, the laser near-field spatial distribution after the plasma mirror was kept constant at plasma mirror fluence of less than 100 kJ/cm2. We also present the results of investigating the difference and the fluctuation in energy, pulse width and pointing stability with and without the plasma mirror system.

We have experimentally improved the temporal contrast of the petawatt J-KAREN-P laser facility. We have investigated how the generation of pre-pulses by post-pulses changes due to the temporal overlap between the stretched pulse and the post-pulse in a chirped-pulse amplification system. We have shown that the time at which the pre-pulse is generated by the post-pulse and its shape are related to the time difference between the stretched main pulse and the post-pulse. With this investigation, we have found and identified the origins of the pre-pulses and have demonstrated the removal of most pre-pulses by eliminating the post-pulse with wedged optics. We have also demonstrated the impact of stretcher optics on the picosecond pedestal. We have realized orders of magnitude enhancement of the pedestal by improving the optical quality of a key component in the stretcher.

Resonant elastic X-ray scattering (RXS) at the erbium absorption edge was investigated in the orbital-ordered compound ErVO3. An RXS signal resonating near the Er L3-edge was clearly observed at (1 0 0). Using this signal, we studied the relation between the anisotropy of the Er 5d orbital and the V 3d orbital ordering because the covalency between the Er 5d and V 3d orbitals is expected to stabilize the C-type orbital ordering of the V 3d electrons.

The orbital ordering in perovskite-type vanadium oxides, RVO3 (R: rare earth), has been investigated by resonant X-ray scattering (RXS) near the V K-edge energy. The G-type orbital order, C-type orbital order and orbital disorder phases are elucidated on the basis of the azimuthal-angle and polarization dependence of the RXS signal reflecting the orbital ordering.

Incorporation of dry matter of perennial soybean into the soil, alone or with mineral fertilization, resulted in improved vegetative growth of common beans. Fairly high LAI was observed at flowering time where dry organic matter had been added, causing leaf self-shading and decreased growth in the later states of development. In contrast, both the control and mineral fertilized plots showed slower but continuous growth up to 50 days from plant emergence. Only slight differences in grain yield were noticed despite remarkable increases of Crop Growth Rate, Relative Growth Rate, Net Assimilation Rate, and Efficiency of Solar Energy Conversion that resulted from the application of dry organic matter.

Vibrio parahaemolyticus and Vibrio vulnificus were isolated from faecal samples of wild aquatic birds in winter. Although V. parahaemolyticus and V. vulnificus were present in low numbers in seawater in the area where the faecal samples of the birds were collected, the pathogens were isolated from the faeces of the birds. This study demonstrates that wild aquatic birds are a vehicle for V. parahaemolyticus and V. vulnificus to survive in winter.

High dielectric constant thin film capacitors for integrated circuits were fabricated with an LSI process. The capacitors comprized AI/TiN top electrode, Si3N4 interlayer insulator, SrTiO3 dielectric and Pt/barrier-metal/Si bottom electrode. Two types of capacitor structure were discussed on the basis of dielectric property and fabrication process. The TiN layer played an important role in suppressing degradation of insulating properties at elevated temperature, which was caused by a reaction between Al and SrTiO3. Breakdown strength larger than 6.6 MV/cm was obtained for 0.001 mm2 area capacitors. However, the strength decreased with increasing capacitor area. The area dependence may be due to surface defects which were introduced during the processes subsequent to SrTiO3 film deposition. The capacitance density of about 9 fF/μm2 was obtained for 150nm thick film. Recent activities of ferroelectric thin film research in Japan was given as well.

SrTiO3 thin film preparation onto Si substrates using RF magnetron sputtering has been studied for a high capacitance density required for the next generation of LSI's. Structural and chemical analysis on the interface between SrTiO3 film and Si was carried out with cross-sectional TEM, EDX, and AES. Dielectric properties were measured on AuTi/SrTiO3/Si/Ti/Au capacitors. The as-grown dielectric films on Si were analyzed and found to consist of three layers; SiO2, amorphous SrTiO3 and crystalline SrTiO3, from interface toward film surface. By annealing at 600 °C, the amorphous SrTiO3 layer was recrystallized, and consequently the capacitance value increased. A typical specific capacitance was 4.7 fF/μm2 and the leakage current was in the order of 10−8 A/cm2, for 180 nm thick SrTiO3 film. The dielectric constant decreased from 147 to 56 with decreasing SrTiO3 film thickness from 480 nm to 80 nm. This is due to the low dielectric constant SiO2 layer (ε=3.9) at the interface. From the film thickness dependence of the ε value, the SiO2 layer thickness was calculated to be 3.9 nm, which agreed well with the value directly observed in the TEM.

To avoid SiO2 layer formation, barrier layers between SrTiO3 and Si have been studied. Among various refractory and noble metals, RuSi and a multi-layer of Pt/Ti have been found to be promising candidates for the barrier material. When RuSi film or Pt/Ti film was formed between SrTiO3 film and Si substrate, dielectric constant of about 190 was obtained in dependent of the SrTiO3 film thickness in the range of 80–250 nm. Analysis on the barrier layers was performed by means of RBS, XPS and XRD.