A new type of ferroelectric liquid crystal light valve (FLCLV) is presented. The design of the FLCLV is based upon the linear equivalent circuit analyses. A photosensor in the FLCLV consists of a metal-insulator-semiconductor (MIS) photodiode. A-Si:H doped with boron and nitrogen [a-Si:(:N:B)] is used in the MIS diode. The a-Si:H(:B:N) film has a dark-conductivity of less than 1×1012 S/cm and a high photosensitivity.
Consequently, the writing characteristics of the FLCLV for a two dimensional (2D) image are evaluated. Using writing light of 630 nm and 1 mW/cm2, a high resolution capability of 120∼140 1p/mm is obtained.