Hgl−xCdxTe layers have been grown on CdTe substrates using dimethylcadmium, diethyltelluride and mercury in a horizontal reactor. Details of conditions for growth of these layers are presented in this paper. Specular surfaces of Hg1−x CdxTe with × ≥ 0.15 were obtained on (100) 3°, → (110) oriented CdTe substrates. Both n-type and p-type layers could be obtained. The mobility of these layers was measured over the temperature range of 10 K to 300 K. The mobility of n-type Hg.81 Cd.19Te layers, measured at 2.1 kG, was 3.0 × 105 cm2/V-sec at 60 K, falling to 2 × 105 cm2/V-sec at 10 K. P-type layers were also grown, and are described in this paper.