Silicon carbide thin films have been deposited via sublimation of a solid organosilane polymer source using atmospheric pressure chemical vapour deposition process (PS-CVD). The advantages of this new process include high deposition rate, compatibility with batch process, hazard-free working environment and low deposition cost. The silicon carbide (SiC) thin films obtained through this process exhibit a highly uniform film thickness, highly conformal coating, and very high chemical resistance to acids and alkalis solutions. These proven characteristics make the SiC thin films obtained by PSCVD process very attractive as a structural material for micro-electro-mechanical systems (MEMS) and as a coating film in a wide range of other applications. These SiC thin films are also expected to be attractive as a semiconductor material provided that the defects and oxygen contamination can be reduced and efficiently controlled. In this work we have investigated the chemical, structural, electrical and optical properties of these films, using elastic recoil detection (ERD), Fourier transform infrared (FTIR) spectroscopy, photospectroscopy, ellipsometry, and capacitance-voltage measurements.