To send content items to your account,
please confirm that you agree to abide by our usage policies.
If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account.
Find out more about sending content to .
To send content items to your Kindle, first ensure firstname.lastname@example.org
is added to your Approved Personal Document E-mail List under your Personal Document Settings
on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part
of your Kindle email address below.
Find out more about sending to your Kindle.
Note you can select to send to either the @free.kindle.com or @kindle.com variations.
‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi.
‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.
The phase-breaking time τφ'. in thin α-FeSi2 films was obtained from the analyses of the lowtemperature magnetoresistance (MR). The films were grown by molecular beam epitaxy (MBE) on Si(111) and capped with epitaxial Si. The MR behavior is interpreted in terms of two-dimensional (2D) weak localization with strong spin-orbit interaction and electron-electron interaction (EEI). By fitting the MR data we obtained the temperature dependence of τφ. The results indicate the phase-breaking time to vary as T− over a large temperature range from 1.7 to 15 K, in agreement with the dependence predicted by the EET in 2D systems.
A new epitaxial CoSi2 phase has been synthesized on Si(111) by molecular beam epitaxy (MBE) at room temperature (RT). Structural investigations revealed, that films grown onto an ultrathin CoSi2 template crystallize with the CsC1 structure with 50% vacancies on the cation lattice. The same is true for codeposited films nucleating from the amorphous phase at very low annealing temperatures (100–200 °C). Upon annealing a gradual transition to the stable bulk phase with the CaF2 structure takes place. For films grown onto a template, some grains of (CsCl)Co0.5Si remain stable up to at least 550 °C, while the films grown without a template are fully transformed.
We discuss the properties of semiconducting iron silicides, grown epitaxially on Si(001) and Si(111) by molecular beam epitaxy. The growth on Si (111) involves phase transitions from epitaxially stabilized metallic phases, leading to larger epitaxial β-FeSi2 grains than most other deposition procedures. The structural and electric properties of β-FeSi2/Si(001) are improved considerably for growth temperatures above 650 °C. Hall mobilities of p—conducting films reach values up to 600 cm2/Vsec at 100 K, at carrier densities below 1017 cm−3. Despite of the high majority carrier mobility and low carrier density, the photoelectric response of p-β-FeSi2/n-Si(001) diodes does not yield any significant contribution from the silicide, however, in accordance with the expected band structure diagram.
Pseudomorphic Fe1-x Si films have been grown on Si(111) by molecular beam epitaxy (MBE) at room temperature (RT). Structural investigations revealed that the phase crystallizes in the cubic CsCl structure with a lattice constant close to half that of Si. Upon annealing, films thicker than 15Å undergo a phase transition to the stable bulk ε-FeSi, either in epitaxial or in polycrystalline form at temperatures around 300°C. Thinner films do not transform to the ε-FeSi phase. Instead they exhibit a continuous increase of the Si content up to the stoichiometry of FeSi2 The CsCl symmetry persists, exept for prolonged annealing close to the transition to βFeSi2, where γ-FeSi2 (CaF2 ) forms as an intermediate phase.
Email your librarian or administrator to recommend adding this to your organisation's collection.