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The peak energy of the room temperature photoluminescence of porous silicon is compared with the bandgap determined from photoelectron spectroscopy measurements for a series of porous silicon samples prepared under different conditions. The photoluminescence bandgap is found to be smaller than the photoelectron spectroscopy bandgap, but exhibits the same trend with preparation conditions. The width of both the photoluminescence spectrum and the L-absorption edge increases when the current density during the preparation is increased or the sample is allowed to soak in HF after preparation.
In-situ measurements of diffuse light scattering at λ = 457 nm are reported from the surface of GaAs films during growth by molecular beam epitaxy. Three different scattering angles are measured simultaneously corresponding to spatial frequencies in the surface roughness of q = 0.9, 12, and 17 μm−1. During growth the initial surface roughness caused by the oxide desorption decreases at high spatial frequencies and increases at low spatial frequency. The low spatial frequency roughness corresponding to scattering vectors parallel to  increases more rapidly during growth than for scattering parallel to .