This work describes the development of a new grow-deposit-grow cluster process to grow ultra-thin stacked oxides. Two approaches for stacked oxide synthesis are discussed, namely thermal and chemical stacked oxides. Fabrication of chemical stacked oxide involves forming the first grown layer chemically after pre-gate cleaning, subsequent deposition of a TEOS-SiO2 layer and final densification/oxidation in a single low pressure (LP) furnace operation. In comparison, all three steps for thermal stacked oxide are accomplished by the LP cluster operation. Both processes offer the advantages of reduced cycle time and higher throughput to the stacked gate technology that produces superior Si/SiO2 interfaces and exhibits higher resistance to plasma-damage during ultra large scale integrated circuit (ULSI) processing. The quality and electrical characteristics of the stacked oxides are discussed.