We report 1.6 μm emission from InAs QDs (QDs) grown on a GaAs substrate. The ensemble is grown on a graded digital alloy (DA), which increases the matrix lattice constant from 5.65 Å to 5.77 Å. The reduced lattice mismatch between the InAs and matrix material produces larger QDs and thereby allows longer wavelength emission compared to standard growth techniques. The resulting QD density ranges from 2×1010 to 8×1010/cm2 with QD dimensions of 5nm x 30nm measured using atomic force microscopy (AFM). According to x-ray diffraction (XRD) data and transmission electron microscopy (TEM), the metamorphic buffer is unstrained with low defect density.