The interfacial compatibility of SiC, Al2O3, and TiC with Ti3Al alloy has been evaluated. Thin films of these three ceramics materials were deposited on Ti3A1 substrates. The thin film diffusion couples were annealed from 600°C to 1000°C, and the thickness of the interfacial layer was obtained from Auger Electron Spectroscopy (AES) concentration depth profiling. The reaction products were identified by X-ray Diffraction (XRD) and AES. In the A12O3/Ti3A1, obvious interdiffusion occurred with some reaction products. In the SiC/Ti3Al, significant interdiffusion and reactions occurred in the interfacial layer, and multilayer reaction zones were found. In the TiC/Ti3Al, the reaction product was primarily the P(Ti3AlC) phase. Kinetic studies of the growth of the interfacial layer showed that SiC reacted most severely with Ti3Al, TiC less so, and AI2O3 the least. The compatibility of these three systems has been assessed.