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We have studied dose loss for B11 and BF2 implants with energies ranging from 10 keV to 1keV for B11 and 45 keV to 2keV for BF2. We found that B11 implants during a 1050C-10s RTA anneal segregate mainly to the bulk of the oxide. High dose BF2 implants on the other hand, show significantly larger amounts of dose loss after stripping the oxide, due to a pile-up of boron at the Si/SiO2 interface. In order to simulate B11 diffusion we have introduced a simple average cluster size model to simulate Boron-Interstitial-Cluster (BIC) evolution. For BF2 implants, we have simulated the effect of F by reducing the damage and we have used interface traps to account for the dose loss observed experimentally. Using these models, we have been able to fit the SIMS profiles across the whole matrix of implant conditions for both B11 and BF2 implants.
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