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Quantitative Strain and Compositional Studies of InxGa1−xAs Epilayer in a GaAs-based pHEMT Device Structure by TEM Techniques
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- Journal:
- Microscopy and Microanalysis / Volume 20 / Issue 4 / August 2014
- Published online by Cambridge University Press:
- 23 April 2014, pp. 1262-1270
- Print publication:
- August 2014
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- Article
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