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We show heteroepitaxial growth of GaAs on Ge/SiGe grown on nanometer-scale grating structures. Conventional lithography techniques were combined with reactive ion and wet-chemical etching to fabricate 1-D patterns of silicon posts. The quality of the GaAs layers was investigated using high-resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), photoluminescence (PL) and etch pit density (EPD) measurements. Our results show significant improvement in the quality of heteroepitaxial layers grown on nano patterned structures compared to those on the unpatterned silicon. The optical quality of the GaAs/Ge/SiGe on nano-scale patterned silicon was comparable to that of single crystal GaAs.
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