Partisan identification is a fundamental force in individual and mass political behavior around the world. Informed by scholarship on human sociality, coalitional psychology, and group behavior, this research argues that partisan identification, like many other group-based behaviors, is influenced by forces of evolution. If correct, then party identifiers should exhibit adaptive behaviors when making group-related political decisions. The authors test this assertion with citizen assessments of the relative physical formidability of competing leaders, an important adaptive factor in leader evaluations. Using original and novel data collected during the contextually different 2008 and 2012 U.S. presidential elections, as well as two distinct measures obtained during both elections, this article presents evidence that partisans overestimate the physical stature of the presidential candidate of their own party compared with the stature of the candidate of the opposition party. These findings suggest that the power of party identification on political behavior may be attributable to the fact that modern political parties address problems similar to the problems groups faced in human ancestral times.

The Wisconsin Plasma Astrophysics Laboratory (WiPAL) is a flexible user facility designed to study a range of astrophysically relevant plasma processes as well as novel geometries that mimic astrophysical systems. A multi-cusp magnetic bucket constructed from strong samarium cobalt permanent magnets now confines a $10~\text{m}^{3}$ , fully ionized, magnetic-field-free plasma in a spherical geometry. Plasma parameters of $T_{e}\approx 5$ to $20~\text{eV}$ and $n_{e}\approx 10^{11}$ to $5\times 10^{12}~\text{cm}^{-3}$ provide an ideal testbed for a range of astrophysical experiments, including self-exciting dynamos, collisionless magnetic reconnection, jet stability, stellar winds and more. This article describes the capabilities of WiPAL, along with several experiments, in both operating and planning stages, that illustrate the range of possibilities for future users.

Microbe-associated molecular pattern (MAMP)-triggered immunity (MTI) is an important component of the plant innate immunity response to invading pathogens. Although several MTI responses can be measured in different plant species, their magnitude is probably plant species specific and even cultivar specific. In this study, a genome-wide transcriptome analysis of two soybean parental lines and two progeny lines treated for 30 min with the MAMPs flg22 and chitin was carried out. This analysis revealed a clear variation in gene expression, under both untreated and flg22+chitin-treated conditions. In addition, genes with potential additive and non-additive effects were identified in the two progeny lines, with several of these genes having a potential function in the control of innate immunity. The data presented herein represent the basis for further functional analysis that can lead to a better understanding of the soybean innate immunity response.

We present results on the growth of Al-Ga-In-N films in multiwafer reactors with 7×2″ wafer capacity. The design of these reactors allows the combination of high efficiency (TMGa efficiency for GaN around 30%) and excellent uniformity. Results on the growth of all materials from the Al-Ga-In-Nitride family are presented in detail. GaN is grown with an excellent optical quality and very good thickness uniformity below 2% across 2″ wafers. The material quality is shown by electron mobility of more than 500 cm2/Vs at an intentional Si-doping of approximately 1×1017 cm−3. Controlled acceptor doping with Mg yields carrier concentrations between 5×1016 and 1018 cm−3. The layer thickness uniformity of the films are better than 2% over a 2″ wafer area. GaInN is grown with PL emission wavelengths in the visible blue region showing a uniformity better than 1.5 nm standard deviation. The film thickness uniformity represents the same figures as obtained for the binary. The compositional uniformity of AlGaN is in the sub 1% range corresponding to a wavelength variation below 1 nm.

The fabrication of heterostructures from these binary and ternary materials is described as well as results from the characterization of these structures. The results show that reliable and efficient production of Al-Ga-In-Nitride based optoelectronic devices can be performed in multiwafer reactors.

We present a radio survey of molecules in a sample of Galactic center molecular clouds, including M0.25 + 0.01, the clouds near Sgr A, and Sgr B2. The molecules detected are primarily NH3 and HC3N; in Sgr B2-N we also detect non-metastable NH3, vibrationally-excited HC3N, torsionally-excited CH3OH, and numerous isotopologues of these species. 36 GHz Class I CH3OH masers are ubiquitous in these fields, and in several cases are associated with new NH3 (3,3) maser candidates. We also find that NH3 and HC3N are depleted or absent toward several of the highest dust column density peaks identified in submillimeter observations, which are associated with water masers and are thus likely in the early stages of star formation.

A novel setup for Raman measurements under small angles of incidence during the parallel plate plasma enhanced chemical vapor deposition of μc-Si:H films is described. The possible influence of disturbances introduced by the setup on growing films is studied. The substrate heating by the probe beam is investigated and reduced as far as possible. It is shown that with optimized experimental parameters the influence of the in-situ measurements on a growing film can be neglected. With optimized settings, in-situ Raman measurements on the intrinsic layer of a microcrystalline silicon solar cell are carried out with a time resolution of about 40 s corresponding to 20 nm of deposited material during each measurement.

In the current work, we present a detailed study on the material properties of the CIGS layers, fabricated on top of the CMOS chips, and compare the results with the fabrication on standard glass substrates. Almost identical elemental composition on both glass and CMOS chips (within measurement error). From X-ray diffraction measurement, except two peaks from the Si <100> substrate, the diffraction peaks from CIGS solar cell CMOS chip and that on glass substrate coincide for all three temperatures. Helium ion microscope images of the cross-section and top view of the CIGS layers, shows that the grain size is suitable for high efficiency solar cells.