Throughout the triennium, Commission 6 has interacted with the Central Bureau for Astronomical Telegrams (CBAT), most ably headed by Brian Marsden. As will be seen from his report below, the use by scientists of the Circulars for rapid dissemination of astronomical and related news continues unabated.

The HYPER-II device has been constructed in Kyushu University to investigate the flow structure formation in an ion-unmagnetized plasma, which is an intermediate state of plasma and consists of unmagnetized ions and magnetized electrons. High density plasmas are produced by electron cyclotron resonance heating, and the flow field structure in an inhomogeneous magnetic field is investigated with a directional Langmuir probe method and a laser-induced fluorescence method. The experimental setup has been completed and the diagnostic systems have been installed to start the experiments. A set of coaxial electrodes will be introduced to control the azimuthal plasma rotation, and the effect of plasma rotation to generation of rectilinear flow structure will be studied. The HYPER-II experiments will clarify the overall flow structure in the inhomogeneous magnetic field and contribute to understanding characteristic feature of the intermediate state of plasma.

The n-type GaN has stability problem of the surface anodic corrosion during the photoelectrochemical reaction for H2 generation. The photoelectrochemical surface stabilities of n-type GaN dependent on the electrolytes were investigated. The flatband potential in HCl obtained from Mott-Schottky plot shifted 0.1 V to positive direction compared with that in H2SO4. The variation of saturated photocurrent of 1 to 3 cycles in H2SO4 was much larger than that of HCl, NaOH and KOH. The surface morphologies also changed by the electrolytes. These results show the absorbed materials on the GaN electrode surface during the photoelectrochemical reactions were changed by the electrolyte and affected the surface reactions.

Let be a classical Lie superalgebra and let ℱ be the category of finite-dimensional -supermodules which are completely reducible over the reductive Lie algebra . In [B. D. Boe, J. R. Kujawa and D. K. Nakano, Complexity and module varieties for classical Lie superalgebras, Int. Math. Res. Not. IMRN (2011), 696–724], we demonstrated that for any module M in ℱ the rate of growth of the minimal projective resolution (i.e. the complexity of M) is bounded by the dimension of . In this paper we compute the complexity of the simple modules and the Kac modules for the Lie superalgebra . In both cases we show that the complexity is related to the atypicality of the block containing the module.

Pressure induced structural phase transformation in nanocluster assembled GaAs is studied using parallel molecular dynamics simulations in the isothermal-isobaric ensemble. In this system the spatial stress distribution is found to be inhomogeneous. As a result structural transformation initiates in the high stress regions at the interface between clusters. Structural and dynamical correlations in the nanophase system are characterized by calculating the spatially resolved bond angle and pair distribution functions and phonon density of states and comparing them with those for a single cluster and bulk crystalline and amorphous systems.

In every wafer processing step wafer stress management is extremely important for advanced device manufacturing. Thermally induced stress on device wafers has a large impact on lithography and affects device yield. Thermally induced stress during rapid thermal annealing (RTA) steps in high density 512MB DRAM device fabrication was investigated using a lamp-based (cold wall) RTA system and compared to results using a furnace-based (hot wall) single wafer RTA system. Compared to the lamp-based (cold wall) system, RTA in a furnace-based (hot wall) system was found to be very effective in suppressing thermally induced stress and increasing device yield due to superior pattern transfer characteristics in lithography.

Via-hole filling technique by momentarily melting an aluminum film has been developed, whereby planarization of aluminum films for multilevel interconnects on integrated circuits can be achieved. The melting is performed with an optical pulse irradiation from an ArF excimer laser without the problem of junction spiking. This technique is applicable to filling submicron-diameter vias having a diameter of 0.6μm with 0.7μm depth(aspect ratio:∼1.2). Very high aspect ratio(2.0) via-hole filling is achieved by heating the sample. During the laser irradiation, the sample substrate was kept at 300°C.

An attempt to develop a new type of high temperature shape memory alloys based on the Ni-Al system has been made through microstructural control. Addition of Fe or Mn to the binary Ni-Al alloy results in the formation of a ductile fcc phase in an extremely brittle P matrix phase, leading to an improvement in its ductility. These ductile alloys with β + γ two-phase structure in the Ni-Al-Fe, Ni-Al-Mn and Ni-Al-Mn-Fe systems exhibit a shape memory effect due to a thermoelastic martensitic transformation in the temperature range between -100°C and 700°C; besides, the transformation temperatures are easily controlled by annealing at an appropriate temperature. These alloys are expected to be a new group of shape memory alloys which operate at elevated temperatures.

A new laser recrystallizing technique has been developedfor high density SOI-LSI's. This technique produces single crystalline silicon islands on an amorphous insulating layerwithout seed. Square windows are opened at arbitrary places in an antireflection cap over a polycrystalline film on an amorphous insulatinq layer. Grain boundaries of the polycrystalline Si in the window are removed completely at the subsequent laser-recrystallization step. Single crystalline silicon islands are formed by self-aligned etching of silicon film which was covered by the antireflection cap. This technique is an effective method for fabricating high density SOI-LSI's, since the singlecrystalline islands can be fabricated at arbitrarily selected places. Yield of the grain-boundary-free islands was 95% the size of the island is 1O x 20μm, and the irradiation oyerlap of laser-beam traces is 70%.

Seeded lateral epitaxial laser-recrystallization of silicon film on SiO2 is applied to fabricate 3-dimensional (3-D) integrations: 3-D CMOS 7-stage ring oscillators. Top p-channel Si-gate SOI MOSFET's are fabricated in the seeded recrystallized silicon directly above bottom n-channel Si-gate bulk MOSFET's with insulator in between. The recrystallized silicon at the seed region can be utilized for buried contact to interconnect bottom and top MOSFET's. At the arsenic implantation step to fabricate source and drain of the bottom MOSFET's, ions are not implanted into the seed region to prevent heavy doping and crystal disorder there; otherwise the dopant diffuses laterally and residual crystal disorder disturbs the epitaxial recrystallization. After the laser-recrystallization, the seed region is implanted with phosphorus to interconnect the top and bottom MOSFET's.

The Ar+ laser irradiation is performed with a 10 W power, a 50 μm spot size, a 13 cm/s scanning speed and a 13 μm step at 400 °C in air. Propagation delay of 460 psec is obtained for the seven stage 3-D CMOS ring oscillator at a power supply voltage of 17 V for a channel length of 3 μm and a channel width of 18 μm. In the seeded SOI films, grain boundary generation and crystal orientation can be controlled.

Oxidation of an aluminum nanocluster (252,158 atoms) of radius 100Å placed in gaseous oxygen (530,727 atoms) is investigated by performing molecular-dynamics simulations on parallel computers. The simulation takes into account the effect of charge transfer between Al and 0 based on the electronegativity equalization principles. We find that the oxidation starts at the surface of the cluster and the oxide layer grows to a thickness of ∼28Å. Evolutions of local temperature and densities of Al and 0 are investigated. The surface oxide melts because of the high temperature resulting from the release of energy associated with Al-O bondings. Amorphous surface-oxides are obtained by quenching the cluster. Vibrational density-of-states for the surface oxide is analyzed through comparisons with those for crystalline Al, Al nanocluster, and α-Al2O3

Some composite materials of poly (lactic acid) (PLA) with organophilic clays and an organic crystal accelerator (OCA) were prepared by melt compounding method to improve the rate of crystallization and mechanical properties, especially heat distortion temperature (HDT). The PLA/clay nanocomposite with 2.9wt% of finely dispersed organophilic clay and 1wt% of the OCA showed an exothermic peak corresponding to its crystallization at 1.9 minutes in the isothermal measurement of DSC at 100°C from its molten state, although PLA itself did not show a clear peak in the same procedure. Crystallized specimens of the nanocomposite were well obtained by injection molding when the hold time was set at more than 90 seconds. The HDT of the specimens that were held for more than 120 seconds in the mold exceeded 120°C. It is about 65°C higher than amorphous PLA. The crystallized specimen with 1wt% of the clay showed higher tensile modulus and Izod impact strength than the amorphous one.

We have fabricated a TE mode InGaAsP active waveguide optical isolator based on the nonreciprocal loss shift in an optical fiber telecommunication wavelength of 1550nm. We demonstrated a TE mode nonreciprocal loss shift of 9.3dB/mm under a magnetic field of +/-1kG in the facricated InGaAsP active waveguide with Fe on an InP substrate at a wavelength of 1560nm. This result opens a way to the monolithic integration of semiconductor-waveguide-type optical isolators with edge emitting semiconductor lasers.

It is determined when a block for the reduced enveloping algebra of a classical Lie algebra corresponding to a character in Levi form has finite representation type. These results refine earlier work of Premet.

Schur algebras are certain finite-dimensional algebras that completely control the polynomial representation theory of the general linear groups over an infinite field. Infinitesimal Schur algebras are truncated versions of the classical Schur algebras which control the polynomial representation theory of the Frobenius kernels of general linear groups. In this paper we use some elementary results on symmetric powers to classify the semisimple Schur algebras. We then classify the semisimple infinitesimal Schur algebras as well.