We investigated a-Si:H compensated materials deposited over a wide range of gas dopant concentrations, from 0.125 ppm up to 103 ppm.
We achieved compensation for different ratio in the gas phase of diborane and phosphine, depending on their concentration. As a relevant result, we found that at constant boron concentration compensation occurs by using two different values of phosphine flow. This behavior can be described by a change of formation mechanism involving active dopants, defects and boron-phosphorus complex, that occurs in a different way depending on the dopant concentrations.
The two compensation regimes are evidenced also by a different behavior under light soaking. Furthermore we found that photocurrent evolution under illumination is determined by two concurrent mechanisms: activation of dopant species and increase of defect density.