The selection of a suitable electrode and barrier layer is important in the integration of lead zirconate titanate (PZT) into memory circuits. Processing at elevated temperatures of up to 800°C can give rise to diffusion processes and therefore to formation of poor quality layers.
In this paper we used Rutherford Backscattering Spectrometry (RBS), Auger Electron Spectrometry (AES), and X-ray Diffraction (XRD) to study the effects of annealings on the interdiffusion of Pt/TiN/Ti trilayers deposited on BPSG/Si substrates. The wafers were annealed in Ar, N2 or O2 ambients with temperatures ranging from 550 to 700°C for 60 min, 30 min or 30 sec. Drastic changes occur when the as deposited Pt/TiN/Ti layers on BPSG/Si structures are exposed to classical heat treatment: oxidation induces diffusion of Ti into Pt and oxidation of Ti is also observed. Regardeless of annealing proceedure used, significant improvement in the interdiffusion of Pt, Ti and O have been achieved when the TiN/Ti/BPSG/Si structure was heated up to 450°C in vacuum. Platinum films deposited on such a structure seem to be a promising barrier layer for PZT film elements as there was no indication of Pb diffusion into the underlying layers and furthermore the desired crystal structure was obtained.