Indium doping of mercury cadmium telluride, grown by organometallic epitaxy, has been accomplished using trimethylindium (TMIn) as the dopant source. Layers, grown by the Direct Alloy Growth (DAG) process, exhibited a linear doping vs TMIn partial pressure characteristic over the 5 × 1016 to 3 × 1018 cm−3 range. A maximum doping concentration of 5 × 1018 cm−3 was obtained in these layers.
The optical band edge in these layers was observed to move to higher energy with increased doping. It is shown that this is caused by the Burstein-Moss shift of the bandedge with doping, and that the Cd fraction is independent of the doping concentration.